Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface

Zheng Gai; W. S. Yang; Q. K. Xue; T. Sakurai; R. G. Zhao

doi:10.1142/s0218625x9900041x

Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface

Zheng Gai, W. S. Yang, Q. K. Xue, T. Sakurai, R. G. Zhao

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Abstract

In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

Original language	English
Pages (from-to)	405-409
Number of pages	5
Journal	Surface Review and Letters
Volume	6
Issue number	3-4
DOIs	https://doi.org/10.1142/s0218625x9900041x
State	Published - 1999
Externally published	Yes

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title = "Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface",

abstract = "In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.",

author = "Zheng Gai and Yang, {W. S.} and Xue, {Q. K.} and T. Sakurai and Zhao, {R. G.}",

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AU - Gai, Zheng

AU - Yang, W. S.

AU - Xue, Q. K.

AU - Sakurai, T.

AU - Zhao, R. G.

PY - 1999

Y1 - 1999

N2 - In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

AB - In view of the special importance of the IV(103)-(1 × 1)-III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 × 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

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DO - 10.1142/s0218625x9900041x

M3 - Article

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SP - 405

EP - 409

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 3-4

ER -

Scanning tunneling microscopy investigation of the Si(103)-(1 × 1)-In surface

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