Scanning Nano-Raman Spectroscopy of Silicon and Other Semiconducting Materials

D. Mehtani; N. Lee; R. D. Hartschuh; A. Kisliuk; M. D. Foster; A. P. Sokolov; J. F. Maguire

doi:10.1016/B978-044452058-6/50007-4

Scanning Nano-Raman Spectroscopy of Silicon and Other Semiconducting Materials

D. Mehtani, N. Lee, R. D. Hartschuh, A. Kisliuk, M. D. Foster, A. P. Sokolov, J. F. Maguire

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

5 Scopus citations

Abstract

The chapter presents an overview of developments in the side-illumination tip-enhanced Raman spectroscopy (TERS) technique, and applications of TERS for the characterization of semiconducting materials and structures. The nano-Raman system was modified to measure optical properties of the tips using the principle of total internal reflection microscopy. The signal in TERS consists of two components, including the background signal coming from the entire laser-illuminated spot and the locally enhanced signal that comes from the nanoscale region in the vicinity of the tip. An important parameter for apertureless near-field optics is the enhancement of the signal provided by the tip. Enhancement is an increase in the Raman signal intensity in the small volume around the tip caused by the plasmon resonance of the tip. The experimental realization of optimum resonant enhancement conditions in TERS requires the measurement of the wavelength-dependent optical response of the tip apex. TERS can be effectively applied for the analysis of thin films.

Original language	English
Title of host publication	Tip Enhancement
Publisher	Elsevier
Pages	177-203
Number of pages	27
ISBN (Print)	9780444520586
DOIs	https://doi.org/10.1016/B978-044452058-6/50007-4
State	Published - 2007
Externally published	Yes

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Cite this

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title = "Scanning Nano-Raman Spectroscopy of Silicon and Other Semiconducting Materials",

abstract = "The chapter presents an overview of developments in the side-illumination tip-enhanced Raman spectroscopy (TERS) technique, and applications of TERS for the characterization of semiconducting materials and structures. The nano-Raman system was modified to measure optical properties of the tips using the principle of total internal reflection microscopy. The signal in TERS consists of two components, including the background signal coming from the entire laser-illuminated spot and the locally enhanced signal that comes from the nanoscale region in the vicinity of the tip. An important parameter for apertureless near-field optics is the enhancement of the signal provided by the tip. Enhancement is an increase in the Raman signal intensity in the small volume around the tip caused by the plasmon resonance of the tip. The experimental realization of optimum resonant enhancement conditions in TERS requires the measurement of the wavelength-dependent optical response of the tip apex. TERS can be effectively applied for the analysis of thin films.",

author = "D. Mehtani and N. Lee and Hartschuh, {R. D.} and A. Kisliuk and Foster, {M. D.} and Sokolov, {A. P.} and Maguire, {J. F.}",

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AU - Mehtani, D.

AU - Lee, N.

AU - Hartschuh, R. D.

AU - Kisliuk, A.

AU - Foster, M. D.

AU - Sokolov, A. P.

AU - Maguire, J. F.

PY - 2007

Y1 - 2007

N2 - The chapter presents an overview of developments in the side-illumination tip-enhanced Raman spectroscopy (TERS) technique, and applications of TERS for the characterization of semiconducting materials and structures. The nano-Raman system was modified to measure optical properties of the tips using the principle of total internal reflection microscopy. The signal in TERS consists of two components, including the background signal coming from the entire laser-illuminated spot and the locally enhanced signal that comes from the nanoscale region in the vicinity of the tip. An important parameter for apertureless near-field optics is the enhancement of the signal provided by the tip. Enhancement is an increase in the Raman signal intensity in the small volume around the tip caused by the plasmon resonance of the tip. The experimental realization of optimum resonant enhancement conditions in TERS requires the measurement of the wavelength-dependent optical response of the tip apex. TERS can be effectively applied for the analysis of thin films.

AB - The chapter presents an overview of developments in the side-illumination tip-enhanced Raman spectroscopy (TERS) technique, and applications of TERS for the characterization of semiconducting materials and structures. The nano-Raman system was modified to measure optical properties of the tips using the principle of total internal reflection microscopy. The signal in TERS consists of two components, including the background signal coming from the entire laser-illuminated spot and the locally enhanced signal that comes from the nanoscale region in the vicinity of the tip. An important parameter for apertureless near-field optics is the enhancement of the signal provided by the tip. Enhancement is an increase in the Raman signal intensity in the small volume around the tip caused by the plasmon resonance of the tip. The experimental realization of optimum resonant enhancement conditions in TERS requires the measurement of the wavelength-dependent optical response of the tip apex. TERS can be effectively applied for the analysis of thin films.

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EP - 203

BT - Tip Enhancement

PB - Elsevier

ER -

Scanning Nano-Raman Spectroscopy of Silicon and Other Semiconducting Materials

Abstract

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