@inproceedings{7d779f05c3a44c5ba1b88087c13b73ae,
title = "Scanning nano-Raman spectroscopy of semiconducting structures",
abstract = "Tip-enhanced Raman spectroscopy (TERS) using side illumination is a promising spectroscopic tool for nanoscale characterization of chemical composition, structure, stresses and conformational states of non-transparent samples. Recent progress has shown signal enhancements for a variety of samples, including break-through enhancements of semiconductors. In this work, optimization of the polarization geometry increases contrast between near-field and far-field signals on Si and improves imaging quality. Two-dimensional images of semiconductor nanostructures show reasonable agreement between topographical and TERS images. These recent TERS results using both silver- and gold-coated tips demonstrate localization of the Raman enhancement to within approximately 20 nm of the tip. Also, the enhanced Raman signal of a strained Si layer is separated from an underlying Si substrate, which is encouraging for potential strain distribution analysis of silicon nanostructures.",
keywords = "Apertureless near-field, Contrast, Imaging, Polarization, Scanning nano-Raman spectroscopy (SNRS), Side-illumination, Strained silicon, Sub-wavelength resolution, Surface plasmon resonance, Tip-enhanced Raman spectroscopy (TERS)",
author = "Hartschuh, {R. D.} and N. Lee and D. Mehtani and A. Kisliuk and Foster, {M. D.} and Sokolov, {A. P.} and Maguire, {J. F.}",
year = "2006",
doi = "10.1117/12.681621",
language = "English",
isbn = "0819464031",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Plasmonics",
note = "Plasmonics: Nanoimaging, Nanofabrication, and their Applications II ; Conference date: 16-08-2006 Through 17-08-2006",
}