Scaling growth rates for perovskite oxide virtual substrates on silicon

Jason Lapano; Matthew Brahlek; Lei Zhang; Joseph Roth; Alexej Pogrebnyakov; Roman Engel-Herbert

doi:10.1038/s41467-019-10273-2

Scaling growth rates for perovskite oxide virtual substrates on silicon

Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert

Quantum Heterostructures

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO₃ exceeding 600 nm hr⁻¹. This tenfold increase in growth rate compared to SrTiO₃ grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Original language	English
Article number	2464
Journal	Nature Communications
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41467-019-10273-2
State	Published - Dec 1 2019

Funding

J.M.L. and R.E.H. acknowledge National Science Foundation through the Penn State MRSEC program DMR-1420620, J.R. acknowledges DMR-1629477 and support through the NSF graduate student fellowship, M.B. and R.E.H. acknowledge the Department of Energy (Grant DE-SC0012375), L.Z. acknowledges the National Science Foundation through DMR-1352502. We thank Dr. Arnab Sen Gupta for assisting in growth of samples, Profs. Jon-Paul Maria and Venkat Gopalan, as well as Drs. Craig Eaton and Julian Walker for helpful discussions.

Funders	Funder number
National Science Foundation
Directorate for Mathematical and Physical Sciences	1352502, 1420620
Directorate for Mathematical and Physical Sciences
U.S. Department of Energy	DMR-1352502, DE-SC0012375
U.S. Department of Energy
Materials Research Science and Engineering Center, Harvard University	DMR-1420620, DMR-1629477
Materials Research Science and Engineering Center, Harvard University

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Scaling growth rates for perovskite oxide virtual substrates on silicon

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