Scaleability of dopant composition in semiconductor crystals grown by the Bridgman process in the presence of magnetic fields

J. M. Hirtz, N. Ma

Research output: Contribution to conferencePaperpeer-review

Abstract

During the horizontal Bridgman process, a single crystal is grown by directional solidification of an initially molten semiconductor (melt) contained in an ampoule. The motion of the electrically- conducting melt can be controlled with an axial or a transverse magnetic field. Because numerical solutions of the transport requires (1) spatial resolution of very thin viscous or species-diffusion boundary layers and (2) time resolution of vastly different time scales due to thermal, momentum and species diffusion, the simulations of transport governed by the equations for thermal, momentum and species transport are numerically time intensive. For typically large values for the aspect ratio, i.e. the length to radius, of the ampoule, the increase in the grid points needed for accurate resolution of the boundary layers requires an impractical amount of computing time. If the dopant composition of the crystal is scaleable, then the dopant transport only needs to be simulated for an 0(1) aspect ratio so that the dopant composition of the crystal can be scaled for any value of the aspect ratio. The present study investigates the effect of the aspect ratio on the crystal's dopant distribution.

Original languageEnglish
DOIs
StatePublished - 2000
Externally publishedYes
Event38th Aerospace Sciences Meeting and Exhibit 2000 - Reno, NV, United States
Duration: Jan 10 2000Jan 13 2000

Conference

Conference38th Aerospace Sciences Meeting and Exhibit 2000
Country/TerritoryUnited States
CityReno, NV
Period01/10/0001/13/00

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