Scalable Reliability Monitoring of GaN Power Converter Through Recurrent Neural Networks

Mehrdad Biglarbegian, Mohammadreza Baharani, Namwon Kim, Hamed Tabkhi, Babak Parkhideh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

Reliability and operation of high-frequency Gallium Nitride (GaN) power converters are yet to be discovered. Coming with the reliability assessment and improving the life extension of power converters, the approach is to monitor semiconductor on-resistor changes as a precursor signature for diagnostic/prognostic. This paper presents a novel approach for hybrid condition-based prognostic and reliability monitoring of GaN devices. The proposed approach offers a multi-physics co-simulations solution for degradation fatigue modeling of the GaN power devices. With the availability of the most granular information deduced from the advanced devices, the paper develops deep learning based algorithms for online reliability in power electronics. The proposed algorithm is based on the prominent version of Recurrent Neural Network (RNN) named Long Short-Term Memory (LSTM). LSTM models are utilized for system training and simulation model calibrations, and eventually predicting the next states within the next time horizon.

Original languageEnglish
Title of host publication2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages7271-7277
Number of pages7
ISBN (Electronic)9781479973118
DOIs
StatePublished - Dec 3 2018
Externally publishedYes
Event10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States
Duration: Sep 23 2018Sep 27 2018

Publication series

Name2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

Conference

Conference10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/TerritoryUnited States
CityPortland
Period09/23/1809/27/18

Funding

This research was supported by the National Science Foundation under Award No. 1610250. The authors also would like to thank Dr. Mohammad Biglarbegian at the University of Guelph, Energy Production and Infrastructure Center (EPIC), and ECE Department at UNC-Charlotte.

FundersFunder number
National Science Foundation1610250

    Keywords

    • Fault diagnostic
    • GaN semiconductor
    • High frequency DC-DC converter
    • Long short-term memory
    • Machine learning
    • Recurrent neural network
    • Reliability

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