Sb on Si(111) studied by branching-ratio photoelectron holography

D. A. Luh, M. T. Sieger, T. Miller, T. C. Chiang

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Abstract

Branching-ratio photoelectron holography has been employed to study the structure of Sb adsorbed on Si(111). The Sb 4d core-level emission was measured as a function of emission direction, and the branching ratio between the two spin-orbit-split components was determined. The data were holographically transformed to yield an image for the atomic distributions near the Sb emitter. The results are consistent with a trimer model.

Original languageEnglish
Pages (from-to)345-349
Number of pages5
JournalSurface Science
Volume374
Issue number1-3
DOIs
StatePublished - Mar 10 1997

Funding

This work was supported by the US Department of Energy (Division of Materials Sciences, Office of Basic Energy Sciences) Grant No. DEFG 02-91 ER45439. The Synchrotron Radiation Center of the University of Wisconsin-Madison is supported by the US National Science Foundation Grant No. DMR-95-31009. An acknowledgment is also made to the Donors of the Petroleum Research Fund, administered by the American Chemical Society, and to the US National Science Foundation Grant No. DMR-95-31809 and No. DMR-95-31582 for partial personnel and equipment support in connection with the synchrotron beamline operation.

FundersFunder number
US Department of Energy
US National Science Foundation
National Science FoundationDMR-95-31809
American Chemical Society
Basic Energy Sciences

    Keywords

    • Adatoms
    • Antimony
    • Silicon
    • Soft X-ray photoelectron spectroscopy
    • Surface structure, morphology, roughness, and topography

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