Abstract
The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.
Original language | English |
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Pages (from-to) | 1438-1441 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 39 |
Issue number | 2 |
DOIs | |
State | Published - 1989 |
Externally published | Yes |