Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies

D. H. Rich, T. Miller, G. E. Franklin, T. C. Chiang

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The Sb saturation of Si(111) and Si(001) was found by angle-resolved photoemission to allow the measurement of the bulk band-dispersion relations along the high-symmetry L and X directions over a wide photon-energy range. Core-level spectroscopy revealed that the Si atoms in the near-surface region are converted to exhibit a bulklike atomic arrangement after Sb coverage. Strain reduction mechanisms in the near-surface region are addressed.

Original languageEnglish
Pages (from-to)1438-1441
Number of pages4
JournalPhysical Review B
Volume39
Issue number2
DOIs
StatePublished - 1989
Externally publishedYes

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