@article{8de8f1a38afb407faaff96339c7a0b0b,
title = "S-Te interdiffusion within grains and grain boundaries in cdte solar cells",
abstract = "At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the CdTe grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy. This interdiffusion happens on both as-grown and CdCl2-treated CdTe. S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images, which further confirms the S diffusion into CdTe grain interiors. Moreover, when a sufficient amount of S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. In the CdCl2-treated CdTe, Cl segregation has also been found at the interface. STEM electron-beam-induced current shows that the p-n junction occurs a few namometers into the CdTe grains, which is consistent with the S diffusion range we observe. The shift of the p-n junction suggests a buried homojunction which would help reduce nonradiative recombination at the junction. Meanwhile, long-range Sdiffusion in CdTe grain boundaries (GBs) has been detected, as hasTe and Cl diffusion in CdS GBs.",
keywords = "CdTe, interface scanning transmission electron microscopy, thin-film photovoltaic",
author = "C. Li and J. Poplawsky and N. Paudel and Pennycook, {T. J.} and Haigh, {S. J.} and Al-Jassim, {M. M.} and Y. Yan and Pennycook, {S. J.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",
year = "2014",
month = nov,
doi = "10.1109/JPHOTOV.2014.2351622",
language = "English",
volume = "4",
pages = "1636--1643",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "Institute of Electrical and Electronics Engineers",
number = "6",
}
