Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

Chee Huei Lee; Shengyong Qin; Madhusudan A. Savaikar; Jiesheng Wang; Boyi Hao; Dongyan Zhang; Douglas Banyai; John A. Jaszczak; Kendal W. Clark; Juan Carlos Idrobo; An Ping Li; Yoke Khin Yap

doi:10.1002/adma.201301339

Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

Chee Huei Lee
, Shengyong Qin
, Madhusudan A. Savaikar
, Jiesheng Wang
, Boyi Hao
, Dongyan Zhang
, Douglas Banyai
, John A. Jaszczak
, Kendal W. Clark
, Juan Carlos Idrobo
, An Ping Li
, Yoke Khin Yap

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Original language	English
Pages (from-to)	4544-4548
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	33
DOIs	https://doi.org/10.1002/adma.201301339
State	Published - Sep 6 2013

Keywords

boron nitride nanosheets
boron nitride nanotubes
quantum dots
tunneling
tunneling field-effect transistors

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10.1002/adma.201301339

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title = "Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots",

abstract = "One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.",

keywords = "boron nitride nanosheets, boron nitride nanotubes, quantum dots, tunneling, tunneling field-effect transistors",

author = "Lee, \{Chee Huei\} and Shengyong Qin and Savaikar, \{Madhusudan A.\} and Jiesheng Wang and Boyi Hao and Dongyan Zhang and Douglas Banyai and Jaszczak, \{John A.\} and Clark, \{Kendal W.\} and Idrobo, \{Juan Carlos\} and Li, \{An Ping\} and Yap, \{Yoke Khin\}",

year = "2013",

month = sep,

day = "6",

doi = "10.1002/adma.201301339",

language = "English",

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journal = "Advanced Materials",

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TY - JOUR

T1 - Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

AU - Lee, Chee Huei

AU - Qin, Shengyong

AU - Savaikar, Madhusudan A.

AU - Wang, Jiesheng

AU - Hao, Boyi

AU - Zhang, Dongyan

AU - Banyai, Douglas

AU - Jaszczak, John A.

AU - Clark, Kendal W.

AU - Idrobo, Juan Carlos

AU - Li, An Ping

AU - Yap, Yoke Khin

PY - 2013/9/6

Y1 - 2013/9/6

N2 - One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

AB - One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

KW - boron nitride nanosheets

KW - boron nitride nanotubes

KW - quantum dots

KW - tunneling

KW - tunneling field-effect transistors

UR - https://www.scopus.com/pages/publications/84883490812

U2 - 10.1002/adma.201301339

DO - 10.1002/adma.201301339

M3 - Article

AN - SCOPUS:84883490812

SN - 0935-9648

VL - 25

SP - 4544

EP - 4548

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

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Keywords

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