Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

Chee Huei Lee; Shengyong Qin; Madhusudan A. Savaikar; Jiesheng Wang; Boyi Hao; Dongyan Zhang; Douglas Banyai; John A. Jaszczak; Kendal W. Clark; Juan Carlos Idrobo; An Ping Li; Yoke Khin Yap

doi:10.1002/adma.201301339

Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

Chee Huei Lee, Shengyong Qin, Madhusudan A. Savaikar, Jiesheng Wang, Boyi Hao, Dongyan Zhang, Douglas Banyai, John A. Jaszczak, Kendal W. Clark, Juan Carlos Idrobo, An Ping Li, Yoke Khin Yap

Scanning Tunneling Microscopy Group

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Original language	English
Pages (from-to)	4544-4548
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	33
DOIs	https://doi.org/10.1002/adma.201301339
State	Published - Sep 6 2013

Keywords

boron nitride nanosheets
boron nitride nanotubes
quantum dots
tunneling
tunneling field-effect transistors

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10.1002/adma.201301339

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title = "Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots",

abstract = "One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.",

keywords = "boron nitride nanosheets, boron nitride nanotubes, quantum dots, tunneling, tunneling field-effect transistors",

author = "Lee, {Chee Huei} and Shengyong Qin and Savaikar, {Madhusudan A.} and Jiesheng Wang and Boyi Hao and Dongyan Zhang and Douglas Banyai and Jaszczak, {John A.} and Clark, {Kendal W.} and Idrobo, {Juan Carlos} and Li, {An Ping} and Yap, {Yoke Khin}",

year = "2013",

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doi = "10.1002/adma.201301339",

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journal = "Advanced Materials",

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T1 - Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

AU - Lee, Chee Huei

AU - Qin, Shengyong

AU - Savaikar, Madhusudan A.

AU - Wang, Jiesheng

AU - Hao, Boyi

AU - Zhang, Dongyan

AU - Banyai, Douglas

AU - Jaszczak, John A.

AU - Clark, Kendal W.

AU - Idrobo, Juan Carlos

AU - Li, An Ping

AU - Yap, Yoke Khin

PY - 2013/9/6

Y1 - 2013/9/6

N2 - One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

AB - One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

KW - boron nitride nanosheets

KW - boron nitride nanotubes

KW - quantum dots

KW - tunneling

KW - tunneling field-effect transistors

UR - http://www.scopus.com/inward/record.url?scp=84883490812&partnerID=8YFLogxK

U2 - 10.1002/adma.201301339

DO - 10.1002/adma.201301339

M3 - Article

AN - SCOPUS:84883490812

SN - 0935-9648

VL - 25

SP - 4544

EP - 4548

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots

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Keywords

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