Room temperature large photoresponse in p-n heterojunction composed of WSe2and 2D electron gas at LaAlO3/KTaO3interface

Ju Li; Xiaowei Zhou; Yucheng Jiang; Run Zhao; Ju Gao; Jie Xing; Guozhen Liu; Jie Qiu

doi:10.1063/5.0076887

Room temperature large photoresponse in p-n heterojunction composed of WSe₂and 2D electron gas at LaAlO₃/KTaO₃interface

Ju Li, Xiaowei Zhou, Yucheng Jiang, Run Zhao, Ju Gao, Jie Xing, Guozhen Liu, Jie Qiu

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The heterostructures combining 2D layered material and two-dimensional electron gas (2DEG) at the surface or interfaces of complex oxides may exhibit abundant and interesting physical properties. In this paper, we report the development and photoelectrical properties of a p-n heterojunction composed of a p-Type 2D layered material WSe2 and n-Type 2DEG at the LaAlO3/KTaO3 interface. The WSe2 flake was first fabricated by mechanical exfoliation and then integrated with 2DEG at the LaAlO3/KTaO3 interface obtained using pulsed laser deposition. The WSe2/2DEG heterostructure shows good rectifying behavior with a low leakage current at room temperature. Additionally, compared with oxide 2DEG, the WSe2/2DEG heterostructure exhibits greatly enhanced visible-light photoresponse. The results imply that the 2D heterostructures based on disparate material systems can be realized and demonstrate potential applications in nanoscale electronics and optoelectronics, which are of great scientific and technological significances.

Original language	English
Article number	241602
Journal	Applied Physics Letters
Volume	119
Issue number	24
DOIs	https://doi.org/10.1063/5.0076887
State	Published - Dec 13 2021
Externally published	Yes

Funding

This work has been supported by the National Natural Science Foundation of China (Grant Nos. 12074282, 11974318, and 11974304), Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611), and Jiangsu Key Disciplines of the Thirteenth Five-Year Plan (20168765).

Funders	Funder number
Jiangsu Key Disciplines of the Thirteenth Five-Year Plan
Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices	SZS201611
National Natural Science Foundation of China	12074282, 11974318, 11974304

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title = "Room temperature large photoresponse in p-n heterojunction composed of WSe2and 2D electron gas at LaAlO3/KTaO3interface",

abstract = "The heterostructures combining 2D layered material and two-dimensional electron gas (2DEG) at the surface or interfaces of complex oxides may exhibit abundant and interesting physical properties. In this paper, we report the development and photoelectrical properties of a p-n heterojunction composed of a p-Type 2D layered material WSe2 and n-Type 2DEG at the LaAlO3/KTaO3 interface. The WSe2 flake was first fabricated by mechanical exfoliation and then integrated with 2DEG at the LaAlO3/KTaO3 interface obtained using pulsed laser deposition. The WSe2/2DEG heterostructure shows good rectifying behavior with a low leakage current at room temperature. Additionally, compared with oxide 2DEG, the WSe2/2DEG heterostructure exhibits greatly enhanced visible-light photoresponse. The results imply that the 2D heterostructures based on disparate material systems can be realized and demonstrate potential applications in nanoscale electronics and optoelectronics, which are of great scientific and technological significances.",

author = "Ju Li and Xiaowei Zhou and Yucheng Jiang and Run Zhao and Ju Gao and Jie Xing and Guozhen Liu and Jie Qiu",

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AU - Li, Ju

AU - Zhou, Xiaowei

AU - Jiang, Yucheng

AU - Zhao, Run

AU - Gao, Ju

AU - Xing, Jie

AU - Liu, Guozhen

AU - Qiu, Jie

PY - 2021/12/13

Y1 - 2021/12/13

N2 - The heterostructures combining 2D layered material and two-dimensional electron gas (2DEG) at the surface or interfaces of complex oxides may exhibit abundant and interesting physical properties. In this paper, we report the development and photoelectrical properties of a p-n heterojunction composed of a p-Type 2D layered material WSe2 and n-Type 2DEG at the LaAlO3/KTaO3 interface. The WSe2 flake was first fabricated by mechanical exfoliation and then integrated with 2DEG at the LaAlO3/KTaO3 interface obtained using pulsed laser deposition. The WSe2/2DEG heterostructure shows good rectifying behavior with a low leakage current at room temperature. Additionally, compared with oxide 2DEG, the WSe2/2DEG heterostructure exhibits greatly enhanced visible-light photoresponse. The results imply that the 2D heterostructures based on disparate material systems can be realized and demonstrate potential applications in nanoscale electronics and optoelectronics, which are of great scientific and technological significances.

AB - The heterostructures combining 2D layered material and two-dimensional electron gas (2DEG) at the surface or interfaces of complex oxides may exhibit abundant and interesting physical properties. In this paper, we report the development and photoelectrical properties of a p-n heterojunction composed of a p-Type 2D layered material WSe2 and n-Type 2DEG at the LaAlO3/KTaO3 interface. The WSe2 flake was first fabricated by mechanical exfoliation and then integrated with 2DEG at the LaAlO3/KTaO3 interface obtained using pulsed laser deposition. The WSe2/2DEG heterostructure shows good rectifying behavior with a low leakage current at room temperature. Additionally, compared with oxide 2DEG, the WSe2/2DEG heterostructure exhibits greatly enhanced visible-light photoresponse. The results imply that the 2D heterostructures based on disparate material systems can be realized and demonstrate potential applications in nanoscale electronics and optoelectronics, which are of great scientific and technological significances.

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Room temperature large photoresponse in p-n heterojunction composed of WSe₂and 2D electron gas at LaAlO₃/KTaO₃interface

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