Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

Wonsuk Chung; Michael O. Thompson; Paul Wickboldt; Daniel Toet; Paul G. Carey

doi:10.1016/j.tsf.2004.01.050

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

Wonsuk Chung
, Michael O. Thompson
, Paul Wickboldt
, Daniel Toet
, Paul G. Carey

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

A XeCl excimer laser (λ = 308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25°C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 〈111〉 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10^-3 Ω cm) to 25 Ω/□ (2.5×10 ^-4 Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.

Original language	English
Pages (from-to)	291-294
Number of pages	4
Journal	Thin Solid Films
Volume	460
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.01.050
State	Published - Jul 22 2004
Externally published	Yes

Funding

This work was performed in part at Lawrence Livermore National Lab (LLNL) and the Cornell Nanofabrication Facility (CNF). CNF is supported by the NSF under Grant ECS-9731293, Cornell University, and industrial affiliates.

Keywords

Annealing
Excimer laser
Indium tin oxide

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10.1016/j.tsf.2004.01.050

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@article{26a8bfcadd9d4aaf8fd642faf527717b,

title = "Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display",

abstract = "A XeCl excimer laser (λ = 308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25°C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 〈111〉 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10-3 Ω cm) to 25 Ω/□ (2.5×10 -4 Ω cm), while the optical transmittance in the visible range increased from 70\% to more than 85\%. Surface roughness and etching properties were also significantly improved following laser annealing.",

keywords = "Annealing, Excimer laser, Indium tin oxide",

author = "Wonsuk Chung and Thompson, \{Michael O.\} and Paul Wickboldt and Daniel Toet and Carey, \{Paul G.\}",

year = "2004",

month = jul,

day = "22",

doi = "10.1016/j.tsf.2004.01.050",

language = "English",

volume = "460",

pages = "291--294",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

AU - Chung, Wonsuk

AU - Thompson, Michael O.

AU - Wickboldt, Paul

AU - Toet, Daniel

AU - Carey, Paul G.

PY - 2004/7/22

Y1 - 2004/7/22

N2 - A XeCl excimer laser (λ = 308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25°C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 〈111〉 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10-3 Ω cm) to 25 Ω/□ (2.5×10 -4 Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.

AB - A XeCl excimer laser (λ = 308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25°C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 〈111〉 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10-3 Ω cm) to 25 Ω/□ (2.5×10 -4 Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.

KW - Annealing

KW - Excimer laser

KW - Indium tin oxide

UR - https://www.scopus.com/pages/publications/2942569379

U2 - 10.1016/j.tsf.2004.01.050

DO - 10.1016/j.tsf.2004.01.050

M3 - Article

AN - SCOPUS:2942569379

SN - 0040-6090

VL - 460

SP - 291

EP - 294

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

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