Room-temperature ferroelectricity in strained SrTiO3

J. H. Haeni; P. Irvin; W. Chang; R. Uecker; P. Reiche; Y. L. Li; S. Choudhury; W. Tian; M. E. Hawley; B. Craigo; A. K. Tagantsev; X. Q. Pan; S. K. Streiffer; L. Q. Chen; S. W. Kirchoefer; J. Levy; D. G. Schlom

doi:10.1038/nature02773

Room-temperature ferroelectricity in strained SrTiO₃

J. H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. L. Li, S. Choudhury, W. Tian, M. E. Hawley, B. Craigo, A. K. Tagantsev, X. Q. Pan, S. K. Streiffer, L. Q. Chen, S. W. Kirchoefer, J. Levy, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

1868 Scopus citations

Abstract

Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T_c) is traditionally accomplished by chemical substitution-as in Ba_xSr_1-xTiO₃, the material widely investigated for microwave devices in which the dielectric constant (ε_r) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T_c in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T_c by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T _c is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high ε_r at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.

Original language	English
Pages (from-to)	758-761
Number of pages	4
Journal	Nature
Volume	430
Issue number	7001
DOIs	https://doi.org/10.1038/nature02773
State	Published - Aug 12 2004
Externally published	Yes

Funding

Acknowledgements We acknowledge discussions and interactions with M. D. Biegalski, J. Schubert, S. Trolier-McKinstry and J. Mannhart during the course of this work. In addition, the financial support of the National Science Foundation, the Office of Naval Research for the work performed at NRL, the Swiss National Science Foundation, and, for the work performed at ANL, the US Department of Energy, Basic Energy Sciences—Materials Sciences is gratefully acknowledged.

Funders	Funder number
US Department of Energy
National Science Foundation
Office of Naval Research
Basic Energy Sciences
Argonne National Laboratory
U.S. Naval Research Laboratory
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

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title = "Room-temperature ferroelectricity in strained SrTiO3",

abstract = "Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution-as in BaxSr1-xTiO3, the material widely investigated for microwave devices in which the dielectric constant (εr) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust Tc in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase Tc by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T c is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high εr at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.",

author = "Haeni, {J. H.} and P. Irvin and W. Chang and R. Uecker and P. Reiche and Li, {Y. L.} and S. Choudhury and W. Tian and Hawley, {M. E.} and B. Craigo and Tagantsev, {A. K.} and Pan, {X. Q.} and Streiffer, {S. K.} and Chen, {L. Q.} and Kirchoefer, {S. W.} and J. Levy and Schlom, {D. G.}",

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AU - Haeni, J. H.

AU - Irvin, P.

AU - Chang, W.

AU - Uecker, R.

AU - Reiche, P.

AU - Li, Y. L.

AU - Choudhury, S.

AU - Tian, W.

AU - Hawley, M. E.

AU - Craigo, B.

AU - Tagantsev, A. K.

AU - Pan, X. Q.

AU - Streiffer, S. K.

AU - Chen, L. Q.

AU - Kirchoefer, S. W.

AU - Levy, J.

AU - Schlom, D. G.

PY - 2004/8/12

Y1 - 2004/8/12

N2 - Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution-as in BaxSr1-xTiO3, the material widely investigated for microwave devices in which the dielectric constant (εr) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust Tc in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase Tc by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T c is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high εr at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.

AB - Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution-as in BaxSr1-xTiO3, the material widely investigated for microwave devices in which the dielectric constant (εr) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust Tc in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase Tc by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T c is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high εr at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.

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Room-temperature ferroelectricity in strained SrTiO₃

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