Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity

Wantae Lim; Yu Lin Wang; F. Ren; D. P. Norton; I. I. Kravchenko; J. M. Zavada; S. J. Pearton

doi:10.1149/1.2750441

Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity

Wantae Lim, Yu Lin Wang, F. Ren, D. P. Norton, I. I. Kravchenko, J. M. Zavada, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2 O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with InZn ratio between 0.3 and 0.6 could be controlled between 10-3 and 103 cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm2 V-1 s-1. The optical transmittance of the IZO films was >70% in all cases. Ohmic contact resistances in the range of 3-8× 10-5 cm were obtained with both NiAu and TiAu deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous.

Original language	English
Pages (from-to)	267-269
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2750441
State	Published - 2007
Externally published	Yes

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title = "Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity",

abstract = "The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2 O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with InZn ratio between 0.3 and 0.6 could be controlled between 10-3 and 103 cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm2 V-1 s-1. The optical transmittance of the IZO films was >70\% in all cases. Ohmic contact resistances in the range of 3-8× 10-5 cm were obtained with both NiAu and TiAu deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous.",

author = "Wantae Lim and Wang, \{Yu Lin\} and F. Ren and Norton, \{D. P.\} and Kravchenko, \{I. I.\} and Zavada, \{J. M.\} and Pearton, \{S. J.\}",

year = "2007",

doi = "10.1149/1.2750441",

language = "English",

volume = "10",

pages = "267--269",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity

AU - Lim, Wantae

AU - Wang, Yu Lin

AU - Ren, F.

AU - Norton, D. P.

AU - Kravchenko, I. I.

AU - Zavada, J. M.

AU - Pearton, S. J.

PY - 2007

Y1 - 2007

N2 - The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2 O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with InZn ratio between 0.3 and 0.6 could be controlled between 10-3 and 103 cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm2 V-1 s-1. The optical transmittance of the IZO films was >70% in all cases. Ohmic contact resistances in the range of 3-8× 10-5 cm were obtained with both NiAu and TiAu deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous.

AB - The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2 O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with InZn ratio between 0.3 and 0.6 could be controlled between 10-3 and 103 cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm2 V-1 s-1. The optical transmittance of the IZO films was >70% in all cases. Ohmic contact resistances in the range of 3-8× 10-5 cm were obtained with both NiAu and TiAu deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous.

UR - https://www.scopus.com/pages/publications/34547165414

U2 - 10.1149/1.2750441

DO - 10.1149/1.2750441

M3 - Article

AN - SCOPUS:34547165414

SN - 1099-0062

VL - 10

SP - 267

EP - 269

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity

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