Room temperature deposited indium zinc oxide thin film transistors

Yu Lin Wang; F. Ren; Wantae Lim; D. P. Norton; S. J. Pearton; I. I. Kravchenko; J. M. Zavada

doi:10.1063/1.2746084

Room temperature deposited indium zinc oxide thin film transistors

Yu Lin Wang, F. Ren, Wantae Lim, D. P. Norton, S. J. Pearton, I. I. Kravchenko, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (Si O2) thickness and the drain current on-to-off ratio was ∼ 105. The maximum field effect mobility in the channel was ∼4.5 cm2 V-1 s-1, lower than the Hall mobility of ∼17 cm2 V-1 s-1 in the same layers, suggesting a strong influence of scattering due to trapped charges at the Si O2 -IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.

Original language	English
Article number	232103
Journal	Applied Physics Letters
Volume	90
Issue number	23
DOIs	https://doi.org/10.1063/1.2746084
State	Published - 2007
Externally published	Yes

Funding

The work is partially supported by DOE under Grant No. DE-FC26-04NT42271 (Ryan Egidi), Army Research Office under Grant No. DAAD19-01-1-0603, and NSF (DMR 0400416, Dr. L. Hess). The authors thank MAIC staff for their help in the performance of this work.

Funders	Funder number
U.S. Department of Energy	DE-FC26-04NT42271
Army Research Office

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abstract = "Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (Si O2) thickness and the drain current on-to-off ratio was ∼ 105. The maximum field effect mobility in the channel was ∼4.5 cm2 V-1 s-1, lower than the Hall mobility of ∼17 cm2 V-1 s-1 in the same layers, suggesting a strong influence of scattering due to trapped charges at the Si O2 -IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.",

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AU - Wang, Yu Lin

AU - Ren, F.

AU - Lim, Wantae

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Zavada, J. M.

PY - 2007

Y1 - 2007

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AB - Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (Si O2) thickness and the drain current on-to-off ratio was ∼ 105. The maximum field effect mobility in the channel was ∼4.5 cm2 V-1 s-1, lower than the Hall mobility of ∼17 cm2 V-1 s-1 in the same layers, suggesting a strong influence of scattering due to trapped charges at the Si O2 -IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.

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Room temperature deposited indium zinc oxide thin film transistors

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