Role of remote interfacial phonons in the resistivity of graphene

Y. G. You; J. H. Ahn; B. H. Park; Y. Kwon; E. E.B. Campbell; S. H. Jhang

doi:10.1063/1.5097043

Role of remote interfacial phonons in the resistivity of graphene

Y. G. You, J. H. Ahn, B. H. Park, Y. Kwon, E. E.B. Campbell, S. H. Jhang

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Abstract

The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO₂, SiO₂, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

Original language	English
Article number	043104
Journal	Applied Physics Letters
Volume	115
Issue number	4
DOIs	https://doi.org/10.1063/1.5097043
State	Published - Jul 22 2019
Externally published	Yes

Funding

This paper was supported by Konkuk University in 2015.

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abstract = "The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.",

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AU - Ahn, J. H.

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AU - Campbell, E. E.B.

AU - Jhang, S. H.

PY - 2019/7/22

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N2 - The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

AB - The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

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JF - Applied Physics Letters

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Role of remote interfacial phonons in the resistivity of graphene

Abstract

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