TY - JOUR
T1 - Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN
AU - Liu, Y.
AU - Gai, Z.
AU - Weinert, M.
AU - Li, L.
PY - 2012/2/13
Y1 - 2012/2/13
N2 - Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga 1-xCu xN, with x as high as 0.04. Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu Ga exhibits a moment of 1 μ B/Cu, it can be suppressed by neighboring intrinsic defects such as N split interstitials.
AB - Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga 1-xCu xN, with x as high as 0.04. Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu Ga exhibits a moment of 1 μ B/Cu, it can be suppressed by neighboring intrinsic defects such as N split interstitials.
UR - http://www.scopus.com/inward/record.url?scp=84863237597&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.85.075207
DO - 10.1103/PhysRevB.85.075207
M3 - Article
AN - SCOPUS:84863237597
SN - 1098-0121
VL - 85
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 7
M1 - 075207
ER -