Role of humidity in oxidation of ultrathin GaSe

Brian M. Kowalski; Noah Manz; Donald Bethke; Eric A. Shaner; Alexey Serov; Nikolai G. Kalugin

doi:10.1088/2053-1591/ab1dd2

Role of humidity in oxidation of ultrathin GaSe

Brian M. Kowalski, Noah Manz, Donald Bethke, Eric A. Shaner, Alexey Serov, Nikolai G. Kalugin

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga₂O₃, SeO₂, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm^-1 and around 1230 cm^-1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga₂O₃, SeO₂, and amorphous selenium.

Original language	English
Article number	085907
Journal	Materials Research Express
Volume	6
Issue number	8
DOIs	https://doi.org/10.1088/2053-1591/ab1dd2
State	Published - May 10 2019
Externally published	Yes

Keywords

2D materials
gallium selenide
oxidation

Access to Document

10.1088/2053-1591/ab1dd2

Cite this

@article{9cf1026b801142ee9f5a6c7dc501c6e2,

title = "Role of humidity in oxidation of ultrathin GaSe",

abstract = "The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm-1 and around 1230 cm-1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga2O3, SeO2, and amorphous selenium.",

keywords = "2D materials, gallium selenide, oxidation",

author = "Kowalski, {Brian M.} and Noah Manz and Donald Bethke and Shaner, {Eric A.} and Alexey Serov and Kalugin, {Nikolai G.}",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

month = may,

day = "10",

doi = "10.1088/2053-1591/ab1dd2",

language = "English",

volume = "6",

journal = "Materials Research Express",

issn = "2053-1591",

publisher = "IOP Publishing",

number = "8",

}

TY - JOUR

T1 - Role of humidity in oxidation of ultrathin GaSe

AU - Kowalski, Brian M.

AU - Manz, Noah

AU - Bethke, Donald

AU - Shaner, Eric A.

AU - Serov, Alexey

AU - Kalugin, Nikolai G.

PY - 2019/5/10

Y1 - 2019/5/10

N2 - The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm-1 and around 1230 cm-1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga2O3, SeO2, and amorphous selenium.

AB - The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm-1 and around 1230 cm-1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga2O3, SeO2, and amorphous selenium.

KW - 2D materials

KW - gallium selenide

KW - oxidation

UR - http://www.scopus.com/inward/record.url?scp=85069443405&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/ab1dd2

DO - 10.1088/2053-1591/ab1dd2

M3 - Article

AN - SCOPUS:85069443405

SN - 2053-1591

VL - 6

JO - Materials Research Express

JF - Materials Research Express

IS - 8

M1 - 085907

ER -

Role of humidity in oxidation of ultrathin GaSe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this