Robust Ferromagnetism in Highly Strained SrCoO3 Thin Films

Yujia Wang, Qing He, Wenmei Ming, Mao Hua Du, Nianpeng Lu, Clodomiro Cafolla, Jun Fujioka, Qinghua Zhang, Ding Zhang, Shengchun Shen, Yingjie Lyu, Alpha T. N'diaye, Elke Arenholz, Lin Gu, Cewen Nan, Yoshinori Tokura, Satoshi Okamoto, Pu Yu

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition-metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen-vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here, using a postdeposition ozone annealing method, we obtain a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observe a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal-to-insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.

Original languageEnglish
Article number021030
JournalPhysical Review X
Volume10
Issue number2
DOIs
StatePublished - Jun 2020

Funding

This study was financially supported by the Basic Science Center Project of National Natural Science Foundation of China (NFSC) under Grant No. 51788104; the National Natural Science Foundation of China (Grant No. 51872155); the National Basic Research Program of China Grant No. 2016YFA0301004; the Beijing Advanced Innovation Center for Future Chip (ICFC); and Engineering and Physical Sciences Research Council with grant reference EP/N016718/1. This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under Contract No. DE-AC02-05CH11231. The research at O. R. N. L. was supported by U.S. DOE, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. N. P. L. acknowledges support from the National Natural Science Foundation of China (Grant No. 11974401), the Hundred Talents Program of the Chinese Academy of Science of China, and the Strategic Priority Research Program of the Chinese Academy of Sciences of China (No. XDB300000000).

FundersFunder number
Chinese Academy of Sciences of ChinaXDB300000000
Hundred Talents Program of the Chinese Academy of Science of China
U.S. Department of Energy
Office of ScienceDE-AC02-05CH11231
Basic Energy Sciences
Division of Materials Sciences and Engineering11974401
Engineering and Physical Sciences Research CouncilEP/N016718/1
National Natural Science Foundation of China51788104, 51872155
National Key Research and Development Program of China2016YFA0301004
Beijing Innovation Center for Future Chip

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