Abstract
Epitaxial strain provides important pathways to control the magnetic and electronic states in transition-metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen-vacancy formation energy, which hinders the direct manipulation of their intrinsic properties. Here, using a postdeposition ozone annealing method, we obtain a series of oxygen stoichiometric SrCoO3 thin films with the tensile strain up to 3.0%. We observe a robust ferromagnetic ground state in all strained thin films, while interestingly the tensile strain triggers a distinct metal-to-insulator transition along with the increase of the tensile strain. The persistent ferromagnetic state across the electrical transition therefore suggests that the magnetic state is directly correlated with the localized electrons, rather than the itinerant ones, which then calls for further investigation of the intrinsic mechanism of this magnetic compound beyond the double-exchange mechanism.
Original language | English |
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Article number | 021030 |
Journal | Physical Review X |
Volume | 10 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2020 |
Funding
This study was financially supported by the Basic Science Center Project of National Natural Science Foundation of China (NFSC) under Grant No. 51788104; the National Natural Science Foundation of China (Grant No. 51872155); the National Basic Research Program of China Grant No. 2016YFA0301004; the Beijing Advanced Innovation Center for Future Chip (ICFC); and Engineering and Physical Sciences Research Council with grant reference EP/N016718/1. This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under Contract No. DE-AC02-05CH11231. The research at O. R. N. L. was supported by U.S. DOE, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. N. P. L. acknowledges support from the National Natural Science Foundation of China (Grant No. 11974401), the Hundred Talents Program of the Chinese Academy of Science of China, and the Strategic Priority Research Program of the Chinese Academy of Sciences of China (No. XDB300000000).
Funders | Funder number |
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Chinese Academy of Sciences of China | XDB300000000 |
Hundred Talents Program of the Chinese Academy of Science of China | |
U.S. Department of Energy | |
Office of Science | DE-AC02-05CH11231 |
Basic Energy Sciences | |
Division of Materials Sciences and Engineering | 11974401 |
Engineering and Physical Sciences Research Council | EP/N016718/1 |
National Natural Science Foundation of China | 51788104, 51872155 |
National Key Research and Development Program of China | 2016YFA0301004 |
Beijing Innovation Center for Future Chip |