RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

W. T. Lim; P. W. Sadik; D. P. Norton; B. P. Gila; S. J. Pearton; I. I. Kravchenko; F. Ren

doi:10.1016/j.apsusc.2008.02.028

RF-sputtered CrB₂ diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO₂

W. T. Lim, P. W. Sadik, D. P. Norton, B. P. Gila, S. J. Pearton, I. I. Kravchenko, F. Ren

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200-700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of ∼2 × 10^-5 Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.

Original language	English
Pages (from-to)	5211-5215
Number of pages	5
Journal	Applied Surface Science
Volume	254
Issue number	16
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.028
State	Published - Jun 15 2008
Externally published	Yes

Funding

This work was partially supported by the ARO under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, Dr. M. Burka and Dr. D. Senich) and NSF (DMR 0400416, Dr. L. Hess).

Funders	Funder number
National Science Foundation	CTS-0301178, DMR 0400416
Army Research Office	DAAD19-01-1-0603

Keywords

CuCrO
Ohmic contacts

Access to Document

10.1016/j.apsusc.2008.02.028

Cite this

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title = "RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2",

abstract = "Ohmic contacts to p-type CuCrO2 using Ni/Au/CrB2/Ti/Au contact metallurgy are reported. The samples were annealed in the 200-700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of ∼2 × 10-5 Ω cm2 was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB2 diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.",

keywords = "CuCrO, Ohmic contacts",

author = "Lim, {W. T.} and Sadik, {P. W.} and Norton, {D. P.} and Gila, {B. P.} and Pearton, {S. J.} and Kravchenko, {I. I.} and F. Ren",

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T1 - RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

AU - Lim, W. T.

AU - Sadik, P. W.

AU - Norton, D. P.

AU - Gila, B. P.

AU - Pearton, S. J.

AU - Kravchenko, I. I.

AU - Ren, F.

PY - 2008/6/15

Y1 - 2008/6/15

N2 - Ohmic contacts to p-type CuCrO2 using Ni/Au/CrB2/Ti/Au contact metallurgy are reported. The samples were annealed in the 200-700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of ∼2 × 10-5 Ω cm2 was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB2 diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.

AB - Ohmic contacts to p-type CuCrO2 using Ni/Au/CrB2/Ti/Au contact metallurgy are reported. The samples were annealed in the 200-700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of ∼2 × 10-5 Ω cm2 was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB2 diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.

KW - CuCrO

KW - Ohmic contacts

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