Review of Silicon Carbide Power Devices and Their Applications

Xu She; Alex Q. Huang; Oscar Lucia; Burak Ozpineci

doi:10.1109/TIE.2017.2652401

Review of Silicon Carbide Power Devices and Their Applications

Xu She, Alex Q. Huang, Oscar Lucia, Burak Ozpineci

Buildings and Transportation Science Div

Research output: Contribution to journal › Article › peer-review

1257 Scopus citations

Abstract

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

Original language	English
Article number	7815312
Pages (from-to)	8193-8205
Number of pages	13
Journal	IEEE Transactions on Industrial Electronics
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TIE.2017.2652401
State	Published - Oct 2017

Keywords

Power converter
power device
review
silicon carbide (SiC)

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10.1109/TIE.2017.2652401

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title = "Review of Silicon Carbide Power Devices and Their Applications",

abstract = "Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.",

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AB - Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

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Review of Silicon Carbide Power Devices and Their Applications

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Keywords

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