Reversible electric-field control of magnetization at oxide interfaces

F. A. Cuellar; Y. H. Liu; J. Salafranca; N. Nemes; E. Iborra; G. Sanchez-Santolino; M. Varela; M. Garcia Hernandez; J. W. Freeland; M. Zhernenkov; M. R. Fitzsimmons; S. Okamoto; S. J. Pennycook; M. Bibes; A. Barthélémy; S. G.E. Te Velthuis; Z. Sefrioui; C. Leon; J. Santamaria

doi:10.1038/ncomms5215

Reversible electric-field control of magnetization at oxide interfaces

F. A. Cuellar, Y. H. Liu, J. Salafranca, N. Nemes, E. Iborra, G. Sanchez-Santolino, M. Varela, M. Garcia Hernandez, J. W. Freeland, M. Zhernenkov, M. R. Fitzsimmons, S. Okamoto, S. J. Pennycook, M. Bibes, A. Barthélémy, S. G.E. Te Velthuis, Z. Sefrioui, C. Leon, J. Santamaria

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Abstract

Electric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage' driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO 2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin' dependent resistance states, in the absence of a magnetic field.

Original language	English
Article number	4215
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms5215
State	Published - Jun 23 2014

Funding

We acknowledge financial support by the Spanish MICINN through grants MAT2011-27470-C02 and Consolider Ingenio 2010–CSD2009-00013 (Imagine), by CAM through grant S2009/MAT-1756 (Phama) and by the ERC starting Investigator Award, grant #239739 STEMOX (G.S.-S.). Work at Argonne National Laboratory (Y.L. and S.G.E.t.V.) was supported by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division. Research (J.F.) and X-ray experiments carried out at the Advanced Photon Source and X-ray experiments carried out at Advanced Light Source were supported by DOE, Office of Science, BES. We thank Masashi Watanabe for the Digital Micrograph PCA plug-in. Research at ORNL was sponsored by the US Department of Energy (DOE), Basic Energy Sciences (BES), Materials Sciences and Engineering Division (SO) and through the Center for Nanophase Materials Sciences (CNMS), which is sponsored by the Scientific User Facilities Division, DOE-BES (MV). Research (MRF) and neutron scattering experiments at the Lujan Center for Neutron Scattering, the Los Alamos National Laboratory were supported by DOE, Office of Science, BES. the Los Alamos National Laboratory is operated by the Los Alamos National Security LLC under DOE Contract DE-AC52-06NA25396. We thank C.H. Zhu and P. Shafer for support during XMCD experiments conducted at ALS.

Funders	Funder number
CAM	S2009/MAT-1756
Center for Nanophase Materials Sciences
DOE-BES
Scientific User Facilities Division
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Argonne National Laboratory
Los Alamos National Laboratory	DE-AC52-06NA25396
Seventh Framework Programme	239739
Division of Materials Sciences and Engineering
Meningitis Research Foundation
European Research Council
Ministerio de Ciencia e Innovación	CSD2009-00013, MAT2011-27470-C02

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Cuellar, F. A., Liu, Y. H., Salafranca, J., Nemes, N., Iborra, E., Sanchez-Santolino, G., Varela, M., Hernandez, M. G., Freeland, J. W., Zhernenkov, M., Fitzsimmons, M. R., Okamoto, S., Pennycook, S. J., Bibes, M., Barthélémy, A., Te Velthuis, S. G. E., Sefrioui, Z., Leon, C., & Santamaria, J. (2014). Reversible electric-field control of magnetization at oxide interfaces. Nature Communications, 5, Article 4215. https://doi.org/10.1038/ncomms5215

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abstract = "Electric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage' driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO 2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin' dependent resistance states, in the absence of a magnetic field.",

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Cuellar, FA, Liu, YH, Salafranca, J, Nemes, N, Iborra, E, Sanchez-Santolino, G, Varela, M, Hernandez, MG, Freeland, JW, Zhernenkov, M, Fitzsimmons, MR, Okamoto, S, Pennycook, SJ, Bibes, M, Barthélémy, A, Te Velthuis, SGE, Sefrioui, Z, Leon, C & Santamaria, J 2014, 'Reversible electric-field control of magnetization at oxide interfaces', Nature Communications, vol. 5, 4215. https://doi.org/10.1038/ncomms5215

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AU - Cuellar, F. A.

AU - Liu, Y. H.

AU - Salafranca, J.

AU - Nemes, N.

AU - Iborra, E.

AU - Sanchez-Santolino, G.

AU - Varela, M.

AU - Hernandez, M. Garcia

AU - Freeland, J. W.

AU - Zhernenkov, M.

AU - Fitzsimmons, M. R.

AU - Okamoto, S.

AU - Pennycook, S. J.

AU - Bibes, M.

AU - Barthélémy, A.

AU - Te Velthuis, S. G.E.

AU - Sefrioui, Z.

AU - Leon, C.

AU - Santamaria, J.

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Reversible electric-field control of magnetization at oxide interfaces

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