Abstract
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. This hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
Original language | English |
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Article number | 9446 |
Journal | Scientific Reports |
Volume | 5 |
DOIs | |
State | Published - Mar 24 2015 |
Funding
We acknowledge grants from City University of Hong Kong’s Strategic Research Grant Project no. 7004012, the Research Grants Council of the Hong Kong Special Administrative Region (Project No.T23-713/11) and Shenzhen Municipality project no. JCYJ20120618115445056. TEM and electron diffraction were conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, Office of Basic Energy Sciences, U.S. Department of Energy.
Funders | Funder number |
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Shenzhen Municipality | JCYJ20120618115445056 |
U.S. Department of Energy | |
Basic Energy Sciences | |
Oak Ridge National Laboratory | |
City University of Hong Kong | 7004012 |
Research Grants Council, University Grants Committee | /11 |