Reversible control of Co magnetism by voltage-induced oxidation

Chong Bi; Yaohua Liu; T. Newhouse-Illige; M. Xu; M. Rosales; J. W. Freeland; Oleg Mryasov; Shufeng Zhang; S. G.E. Te Velthuis; W. G. Wang

doi:10.1103/PhysRevLett.113.267202

Reversible control of Co magnetism by voltage-induced oxidation

Chong Bi, Yaohua Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J. W. Freeland, Oleg Mryasov, Shufeng Zhang, S. G.E. Te Velthuis, W. G. Wang

Research output: Contribution to journal › Article › peer-review

281 Scopus citations

Abstract

We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.

Original language	English
Article number	267202
Journal	Physical Review Letters
Volume	113
Issue number	26
DOIs	https://doi.org/10.1103/PhysRevLett.113.267202
State	Published - Dec 30 2014
Externally published	Yes

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title = "Reversible control of Co magnetism by voltage-induced oxidation",

abstract = "We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.",

author = "Chong Bi and Yaohua Liu and T. Newhouse-Illige and M. Xu and M. Rosales and Freeland, {J. W.} and Oleg Mryasov and Shufeng Zhang and {Te Velthuis}, {S. G.E.} and Wang, {W. G.}",

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doi = "10.1103/PhysRevLett.113.267202",

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T1 - Reversible control of Co magnetism by voltage-induced oxidation

AU - Bi, Chong

AU - Liu, Yaohua

AU - Newhouse-Illige, T.

AU - Xu, M.

AU - Rosales, M.

AU - Freeland, J. W.

AU - Mryasov, Oleg

AU - Zhang, Shufeng

AU - Te Velthuis, S. G.E.

AU - Wang, W. G.

PY - 2014/12/30

Y1 - 2014/12/30

N2 - We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.

AB - We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2 has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.

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DO - 10.1103/PhysRevLett.113.267202

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VL - 113

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Reversible control of Co magnetism by voltage-induced oxidation

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