Reversibility of the perovskite-to-fluorite phase transformation in lead-based thin and ultrathin films

A study was conducted to demonstrate a novel approach for the fabrication of lead zirconate titanate (PZT)-based thin and ultrathin films that exploit the reversibility of a phase transformation between the stoichiometric ferroelectric perovskite and the lead-deficient non-ferroelectric fluorite. The PZT-based thin and ultrathin films exploited the reversibility of a phase transformation between the stoichiometric ferroelectric perovskite and the lead-deficient non-ferroelectric fluorite, to produce single-phase materials with excellent electrical properties, while minimizing chemical heterogeinities within the film and interactions with the electrode. It was also demonstrated that PZT are better suited for applications, including ferroelectric non volatile memory (FERAM), due to their polarization and better electromechanical properties.