Revealing two-stage phase transition process in defective KTaO3 under inelastic interactions

D. Iancu; E. Zarkadoula; M. D. Mihai; C. Burducea; I. Burducea; M. Straticiuc; Y. Zhang; W. J. Weber; G. Velişa

doi:10.1016/j.scriptamat.2022.115032

Revealing two-stage phase transition process in defective KTaO₃ under inelastic interactions

D. Iancu
, E. Zarkadoula
, M. D. Mihai
, C. Burducea
, I. Burducea
, M. Straticiuc
, Y. Zhang
, W. J. Weber
, G. Velişa

Nanomaterials Theory Institute

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The interactions of ions with defective KTaO₃ has been studied by irradiating pre-damaged single crystal KTaO₃ with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO₃, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, S_e, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of S_e with defects enables amorphous ion track creation. At lower values of S_e (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm², which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO₃, is observed.

Original language	English
Article number	115032
Journal	Scripta Materialia
Volume	222
DOIs	https://doi.org/10.1016/j.scriptamat.2022.115032
State	Published - Jan 1 2023

Funding

This work was supported by a grant of the Romanian Ministry of Education and Research, CNCS—UEFISCDI, project number PN-III-P4-IDPCE2020- 1379, within PNCDI III. The contributions of Y. Zhang and W. J. Weber to this work were supported by the National Science Foundation under Grant No. DMR-2104228 .

Keywords

Ion channeling
Ion-induced annealing
Molecular dynamics
Perovskite
Two-stage process

Access to Document

10.1016/j.scriptamat.2022.115032

Cite this

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title = "Revealing two-stage phase transition process in defective KTaO3 under inelastic interactions",

abstract = "The interactions of ions with defective KTaO3 has been studied by irradiating pre-damaged single crystal KTaO3 with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO3, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, Se, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Se with defects enables amorphous ion track creation. At lower values of Se (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm2, which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO3, is observed.",

keywords = "Ion channeling, Ion-induced annealing, Molecular dynamics, Perovskite, Two-stage process",

author = "D. Iancu and E. Zarkadoula and Mihai, \{M. D.\} and C. Burducea and I. Burducea and M. Straticiuc and Y. Zhang and Weber, \{W. J.\} and G. Veli{\c s}a",

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doi = "10.1016/j.scriptamat.2022.115032",

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T1 - Revealing two-stage phase transition process in defective KTaO3 under inelastic interactions

AU - Iancu, D.

AU - Zarkadoula, E.

AU - Mihai, M. D.

AU - Burducea, C.

AU - Burducea, I.

AU - Straticiuc, M.

AU - Zhang, Y.

AU - Weber, W. J.

AU - Velişa, G.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - The interactions of ions with defective KTaO3 has been studied by irradiating pre-damaged single crystal KTaO3 with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO3, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, Se, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Se with defects enables amorphous ion track creation. At lower values of Se (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm2, which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO3, is observed.

AB - The interactions of ions with defective KTaO3 has been studied by irradiating pre-damaged single crystal KTaO3 with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO3, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, Se, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Se with defects enables amorphous ion track creation. At lower values of Se (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm2, which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO3, is observed.

KW - Ion channeling

KW - Ion-induced annealing

KW - Molecular dynamics

KW - Perovskite

KW - Two-stage process

UR - https://www.scopus.com/pages/publications/85137175024

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DO - 10.1016/j.scriptamat.2022.115032

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