Abstract
The interactions of ions with defective KTaO3 has been studied by irradiating pre-damaged single crystal KTaO3 with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO3, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, Se, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Se with defects enables amorphous ion track creation. At lower values of Se (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm2, which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO3, is observed.
Original language | English |
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Article number | 115032 |
Journal | Scripta Materialia |
Volume | 222 |
DOIs | |
State | Published - Jan 1 2023 |
Funding
This work was supported by a grant of the Romanian Ministry of Education and Research, CNCS—UEFISCDI, project number PN-III-P4-IDPCE2020- 1379, within PNCDI III. The contributions of Y. Zhang and W. J. Weber to this work were supported by the National Science Foundation under Grant No. DMR-2104228 .
Funders | Funder number |
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National Science Foundation | DMR-2104228 |
Corporation for National and Community Service | |
Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii | PN-III-P4-IDPCE2020- 1379 |
Ministry of Education and Research, Romania |
Keywords
- Ion channeling
- Ion-induced annealing
- Molecular dynamics
- Perovskite
- Two-stage process