Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

Xufan Li, Leonardo Basile, Mina Yoon, Cheng Ma, Alexander A. Puretzky, Jaekwang Lee, Juan C. Idrobo, Miaofang Chi, Christopher M. Rouleau, David B. Geohegan, Kai Xiao

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Characterizing and controlling the interlayer orientations and stacking orders of two-dimensional (2D) bilayer crystals and van der Waals (vdW) heterostructures is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) crystals that result from different layer stackings provide an ideal platform to study the stacking configurations in 2D bilayer crystals. Through a controllable vapor-phase deposition method, bilayer GaSe crystals were selectively grown and their two preferred 0° or 60° interlayer rotations were investigated. The commensurate stacking configurations (AA′ and AB stacking) in as-grown bilayer GaSe crystals are clearly observed at the atomic scale, and the Ga-terminated edge structure was identified using scanning transmission electron microscopy. Theoretical analysis reveals that the energies of the interlayer coupling are responsible for the preferred orientations among the bilayer GaSe crystals.

Original languageEnglish
Pages (from-to)2712-2717
Number of pages6
JournalAngewandte Chemie - International Edition
Volume54
Issue number9
DOIs
StatePublished - Feb 23 2015

Keywords

  • Gallium selenide
  • Interlayer orientation
  • Monolayers
  • Stacking
  • Vapor-phase deposition

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