Resistance switching in BaTi O3-δ Si p-n heterostructure

Guo Zhen Liu; Kui Juan Jin; Jie Qiu; Meng He; Hui Bin Lu; Jie Xing; Yue Liang Zhou; Guo Zhen Yang

doi:10.1063/1.2821369

Resistance switching in BaTi O3-δ Si p-n heterostructure

Guo Zhen Liu, Kui Juan Jin, Jie Qiu, Meng He, Hui Bin Lu, Jie Xing, Yue Liang Zhou, Guo Zhen Yang

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The resistance switching characteristic and electric displacement-voltage hysteresis loop have been observed in BaTi O3-δ Si p-n heterostructures fabricated by laser molecular beam epitaxy. The ferroelectric response of BaTi O3-δ can be enhanced by the interface polarization of the junction. The resistance switching property observed in the BaTi O3-δ Si p-n junction can be attributed to the irreversibility of polarization in the polarization and depolarization processes. The present results indicate a potential application of resistance switching in the heterostructures consisting of oxides and Si.

Original language	English
Article number	252110
Journal	Applied Physics Letters
Volume	91
Issue number	25
DOIs	https://doi.org/10.1063/1.2821369
State	Published - 2007
Externally published	Yes

Funding

The authors acknowledge the financial support from the National Natural Science Foundation of China and the National Basic Research Program of China.

Funders	Funder number
National Natural Science Foundation of China
National Basic Research Program of China (973 Program)

Access to Document

10.1063/1.2821369

Cite this

@article{097e2ddc6e9643f6862004dd358669b2,

title = "Resistance switching in BaTi O3-δ Si p-n heterostructure",

abstract = "The resistance switching characteristic and electric displacement-voltage hysteresis loop have been observed in BaTi O3-δ Si p-n heterostructures fabricated by laser molecular beam epitaxy. The ferroelectric response of BaTi O3-δ can be enhanced by the interface polarization of the junction. The resistance switching property observed in the BaTi O3-δ Si p-n junction can be attributed to the irreversibility of polarization in the polarization and depolarization processes. The present results indicate a potential application of resistance switching in the heterostructures consisting of oxides and Si.",

author = "Liu, {Guo Zhen} and Jin, {Kui Juan} and Jie Qiu and Meng He and Lu, {Hui Bin} and Jie Xing and Zhou, {Yue Liang} and Yang, {Guo Zhen}",

year = "2007",

doi = "10.1063/1.2821369",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Resistance switching in BaTi O3-δ Si p-n heterostructure

AU - Liu, Guo Zhen

AU - Jin, Kui Juan

AU - Qiu, Jie

AU - He, Meng

AU - Lu, Hui Bin

AU - Xing, Jie

AU - Zhou, Yue Liang

AU - Yang, Guo Zhen

PY - 2007

Y1 - 2007

N2 - The resistance switching characteristic and electric displacement-voltage hysteresis loop have been observed in BaTi O3-δ Si p-n heterostructures fabricated by laser molecular beam epitaxy. The ferroelectric response of BaTi O3-δ can be enhanced by the interface polarization of the junction. The resistance switching property observed in the BaTi O3-δ Si p-n junction can be attributed to the irreversibility of polarization in the polarization and depolarization processes. The present results indicate a potential application of resistance switching in the heterostructures consisting of oxides and Si.

AB - The resistance switching characteristic and electric displacement-voltage hysteresis loop have been observed in BaTi O3-δ Si p-n heterostructures fabricated by laser molecular beam epitaxy. The ferroelectric response of BaTi O3-δ can be enhanced by the interface polarization of the junction. The resistance switching property observed in the BaTi O3-δ Si p-n junction can be attributed to the irreversibility of polarization in the polarization and depolarization processes. The present results indicate a potential application of resistance switching in the heterostructures consisting of oxides and Si.

UR - http://www.scopus.com/inward/record.url?scp=37549032719&partnerID=8YFLogxK

U2 - 10.1063/1.2821369

DO - 10.1063/1.2821369

M3 - Article

AN - SCOPUS:37549032719

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252110

ER -

Resistance switching in BaTi O3-δ Si p-n heterostructure

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this