Resistance degradation of CVD (Ba,Sr)TiO3 thin films for DRAMs and integrated decoupling capacitors

C. Basceri; M. A. Wells; S. K. Streiffer; A. I. Kingon; S. Bilodeau; R. Carl; P. C. van Buskirk; S. R. Summerfelt; P. McIntyre

Resistance degradation of CVD (Ba,Sr)TiO₃ thin films for DRAMs and integrated decoupling capacitors

C. Basceri, M. A. Wells, S. K. Streiffer, A. I. Kingon, S. Bilodeau, R. Carl, P. C. van Buskirk, S. R. Summerfelt, P. McIntyre

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba, Sr)TiO₃ thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85 °C and 1.6 V exceed the current benchmark of 10 years for all the films studied.

Original language	English
Pages	51-54
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Conference

Conference	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	08/18/96 → 08/21/96

Cite this

Basceri, C., Wells, M. A., Streiffer, S. K., Kingon, A. I., Bilodeau, S., Carl, R., van Buskirk, P. C., Summerfelt, S. R., & McIntyre, P. (1996). Resistance degradation of CVD (Ba,Sr)TiO₃ thin films for DRAMs and integrated decoupling capacitors. 51-54. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

@conference{e6cb441a42a4437887311d1e34936d0c,

title = "Resistance degradation of CVD (Ba,Sr)TiO3 thin films for DRAMs and integrated decoupling capacitors",

abstract = "We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba, Sr)TiO3 thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85 °C and 1.6 V exceed the current benchmark of 10 years for all the films studied.",

author = "C. Basceri and Wells, {M. A.} and Streiffer, {S. K.} and Kingon, {A. I.} and S. Bilodeau and R. Carl and {van Buskirk}, {P. C.} and Summerfelt, {S. R.} and P. McIntyre",

year = "1996",

language = "English",

pages = "51--54",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Basceri, C, Wells, MA, Streiffer, SK, Kingon, AI, Bilodeau, S, Carl, R, van Buskirk, PC, Summerfelt, SR & McIntyre, P 1996, 'Resistance degradation of CVD (Ba,Sr)TiO₃ thin films for DRAMs and integrated decoupling capacitors', Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 08/18/96 - 08/21/96 pp. 51-54.

Resistance degradation of CVD (Ba,Sr)TiO₃ thin films for DRAMs and integrated decoupling capacitors. / Basceri, C.; Wells, M. A.; Streiffer, S. K. et al.
1996. 51-54 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Resistance degradation of CVD (Ba,Sr)TiO3 thin films for DRAMs and integrated decoupling capacitors

AU - Basceri, C.

AU - Wells, M. A.

AU - Streiffer, S. K.

AU - Kingon, A. I.

AU - Bilodeau, S.

AU - Carl, R.

AU - van Buskirk, P. C.

AU - Summerfelt, S. R.

AU - McIntyre, P.

PY - 1996

Y1 - 1996

N2 - We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba, Sr)TiO3 thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85 °C and 1.6 V exceed the current benchmark of 10 years for all the films studied.

AB - We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba, Sr)TiO3 thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85 °C and 1.6 V exceed the current benchmark of 10 years for all the films studied.

UR - http://www.scopus.com/inward/record.url?scp=0030361045&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030361045

SP - 51

EP - 54

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Resistance degradation of CVD (Ba,Sr)TiO₃ thin films for DRAMs and integrated decoupling capacitors

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