TY - GEN
T1 - Reliability of IGBT in a STATCOM for harmonic compensation and power factor correction
AU - Reddy, Lakshmi Gopi
AU - Tolbert, Leon M.
AU - Ozpineci, Burak
AU - Xu, Yan
AU - Rizy, D. Tom
PY - 2012
Y1 - 2012
N2 - With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.
AB - With smart grid integration, there is a need to characterize reliability of a power system by including reliability of power semiconductors in grid related applications. In this paper, the reliability of IGBTs in a STATCOM application is presented for two different applications, power factor correction and harmonic elimination. The STATCOM model is developed in EMTP, and analytical equations for average conduction losses in an IGBT and a diode are derived and compared with experimental data. A commonly used reliability model is used to predict reliability of IGBT.
UR - https://www.scopus.com/pages/publications/84860206604
U2 - 10.1109/APEC.2012.6165908
DO - 10.1109/APEC.2012.6165908
M3 - Conference contribution
AN - SCOPUS:84860206604
SN - 9781457712159
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 783
EP - 788
BT - APEC 2012 - 27th Annual IEEE Applied Power Electronics Conference and Exposition
T2 - 27th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2012
Y2 - 5 February 2012 through 9 February 2012
ER -