Abstract
The reflow characteristics of copper, which is expected to be used as interconnection materials in the next generation semiconductor devices, were investigated. Copper films were deposited on a hole and trench pattern by metal organic chemical vapor deposition(MOCVD) and annealed in oxygen ambient with the annealing temperatures ranging from 350°C and 550°C. Copper films were reflowed into the pattern upon the annealing temperature higher than 450°C in oxygen ambient. It is considered that the reflow takes place as the heat generated by the oxidation of copper liquefies the copper film partly and the liquid state of copper fills the patterns for minimizing the surface energy and the potential energy. Copper oxide layer formed on the surface copper films were removed to some extent by the reduction effect of hydrogen gas. The resistivity of copper films rapidly increased at an annealing temperature of 550°C due to the copper agglomeration.
| Original language | English |
|---|---|
| Pages (from-to) | 820-825 |
| Number of pages | 6 |
| Journal | Key Engineering Materials |
| Volume | 270-273 |
| Issue number | I |
| State | Published - 2004 |
| Externally published | Yes |
| Event | Proceedings of the 11th Asian Pacific Conference on Nondestructive Testing - Jeju Island, Korea, Republic of Duration: Nov 3 2003 → Nov 7 2003 |
Keywords
- Agglomeration
- Annealing
- MOCVD
- Reflow
- Surface energy