Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

P. Lv; G. F. Cao; L. J. Wen; S. A. Kharusi; G. Anton; I. J. Arnquist; I. Badhrees; P. S. Barbeau; D. Beck; V. Belov; T. Bhatta; P. A. Breur; J. P. Brodsky; E. Brown; T. Brunner; S. Byrne Mamahit; E. Caden; L. Cao; C. Chambers; B. Chana; S. A. Charlebois; M. Chiu; B. Cleveland; M. Coon; A. Craycraft; J. Dalmasson; T. Daniels; L. Darroch; A. De St. Croix; A. Der Mesrobian-Kabakian; K. Deslandes; R. Devoe; M. L.DI Vacri; J. DIlling; Y. Y. DIng; M. J. Dolinski; L. Doria; A. Dragone; J. Echevers; F. Edaltafar; M. Elbeltagi; L. Fabris; D. Fairbank; W. Fairbank; J. Farine; S. Ferrara; S. Feyzbakhsh; A. Fucarino; G. Gallina; P. Gautam; G. Giacomini; D. Goeldi; R. Gornea; G. Gratta; E. V. Hansen; M. Heffner; E. W. Hoppe; J. Hobl; A. House; M. Hughes; A. Iverson; A. Jamil; M. J. Jewell; X. S. Jiang; A. Karelin; L. J. Kaufman; T. Koffas; R. Krucken; A. Kuchenkov; K. S. Kumar; Y. Lan; A. Larson; K. G. Leach; B. G. Lenardo; D. S. Leonard; G. Li; S. Li; Z. Li; C. Licciardi; R. MacLellan; N. Massacret; T. McElroy; M. Medina-Peregrina; T. Michel; B. Mong; D. C. Moore; K. Murray; P. Nakarmi; C. R. Natzke; R. J. Newby; Z. Ning; O. Njoya; F. Nolet; O. Nusair; K. Odgers; A. Odian; M. Oriunno; J. L. Orrell; G. S. Ortega; I. Ostrovskiy; C. T. Overman; S. Parent; A. Piepke; A. Pocar; J. F. Pratte; V. Radeka; E. Raguzin; S. Rescia; F. Retiere; M. Richman; A. Robinson; T. Rossignol; P. C. Rowson; N. Roy; J. Runge; R. Saldanha; S. Sangiorgio; K. Skarpaas; A. K. Soma; G. St-Hilaire; V. Stekhanov; T. Stiegler; X. L. Sun; M. Tarka; J. Todd; T. I. Totev; R. Tsang; T. Tsang; F. Vachon; V. Veeraraghavan; S. Viel; G. Visser; C. Vivo-Vilches; J. L. Vuilleumier; M. Wagenpfeil; T. Wager; M. Walent; Q. Wang; J. Watkins; W. Wei; U. Wichoski; S. X. Wu; W. H. Wu; X. Wu; Q. Xia; H. Yang; L. Yang; O. Zeldovich; J. Zhao; Y. Zhou; T. Ziegler

doi:10.1109/TNS.2020.3035172

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

P. Lv, G. F. Cao, L. J. Wen, S. A. Kharusi, G. Anton, I. J. Arnquist, I. Badhrees, P. S. Barbeau, D. Beck, V. Belov, T. Bhatta, P. A. Breur, J. P. Brodsky, E. Brown, T. Brunner, S. Byrne Mamahit, E. Caden, L. Cao, C. Chambers, B. ChanaS. A. Charlebois, M. Chiu, B. Cleveland, M. Coon, A. Craycraft, J. Dalmasson, T. Daniels, L. Darroch, A. De St. Croix, A. Der Mesrobian-Kabakian, K. Deslandes, R. Devoe, M. L.DI Vacri, J. DIlling, Y. Y. DIng, M. J. Dolinski, L. Doria, A. Dragone, J. Echevers, F. Edaltafar, M. Elbeltagi, L. Fabris, D. Fairbank, W. Fairbank, J. Farine, S. Ferrara, S. Feyzbakhsh, A. Fucarino, G. Gallina, P. Gautam, G. Giacomini, D. Goeldi, R. Gornea, G. Gratta, E. V. Hansen, M. Heffner, E. W. Hoppe, J. Hobl, A. House, M. Hughes, A. Iverson, A. Jamil, M. J. Jewell, X. S. Jiang, A. Karelin, L. J. Kaufman, T. Koffas, R. Krucken, A. Kuchenkov, K. S. Kumar, Y. Lan, A. Larson, K. G. Leach, B. G. Lenardo, D. S. Leonard, G. Li, S. Li, Z. Li, C. Licciardi, R. MacLellan, N. Massacret, T. McElroy, M. Medina-Peregrina, T. Michel, B. Mong, D. C. Moore, K. Murray, P. Nakarmi, C. R. Natzke, R. J. Newby, Z. Ning, O. Njoya, F. Nolet, O. Nusair, K. Odgers, A. Odian, M. Oriunno, J. L. Orrell, G. S. Ortega, I. Ostrovskiy, C. T. Overman, S. Parent, A. Piepke, A. Pocar, J. F. Pratte, V. Radeka, E. Raguzin, S. Rescia, F. Retiere, M. Richman, A. Robinson, T. Rossignol, P. C. Rowson, N. Roy, J. Runge, R. Saldanha, S. Sangiorgio, K. Skarpaas, A. K. Soma, G. St-Hilaire, V. Stekhanov, T. Stiegler, X. L. Sun, M. Tarka, J. Todd, T. I. Totev, R. Tsang, T. Tsang, F. Vachon, V. Veeraraghavan, S. Viel, G. Visser, C. Vivo-Vilches, J. L. Vuilleumier, M. Wagenpfeil, T. Wager, M. Walent, Q. Wang, J. Watkins, W. Wei, U. Wichoski, S. X. Wu, W. H. Wu, X. Wu, Q. Xia, H. Yang, L. Yang, O. Zeldovich, J. Zhao, Y. Zhou, T. Ziegler

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

Original language	English
Article number	9246577
Pages (from-to)	2501-2510
Number of pages	10
Journal	IEEE Transactions on Nuclear Science
Volume	67
Issue number	12
DOIs	https://doi.org/10.1109/TNS.2020.3035172
State	Published - Dec 2020
Externally published	Yes

Keywords

Diffuse reflectance
photon detection efficiency (PDE)
silicon photomultiplier (SiPM)
specular reflectance
vacuum ultraviolet (VUV)

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10.1109/TNS.2020.3035172

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Lv, P., Cao, G. F., Wen, L. J., Kharusi, S. A., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Breur, P. A., Brodsky, J. P., Brown, E., Brunner, T., Mamahit, S. B., Caden, E., Cao, L., Chambers, C., ... Ziegler, T. (2020). Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths. IEEE Transactions on Nuclear Science, 67(12), 2501-2510. Article 9246577. https://doi.org/10.1109/TNS.2020.3035172

@article{8c0204b3009b44d2bbb7ce04658e33a6,

title = "Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths",

abstract = "Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.",

keywords = "Diffuse reflectance, photon detection efficiency (PDE), silicon photomultiplier (SiPM), specular reflectance, vacuum ultraviolet (VUV)",

author = "P. Lv and Cao, {G. F.} and Wen, {L. J.} and Kharusi, {S. A.} and G. Anton and Arnquist, {I. J.} and I. Badhrees and Barbeau, {P. S.} and D. Beck and V. Belov and T. Bhatta and Breur, {P. A.} and Brodsky, {J. P.} and E. Brown and T. Brunner and Mamahit, {S. Byrne} and E. Caden and L. Cao and C. Chambers and B. Chana and Charlebois, {S. A.} and M. Chiu and B. Cleveland and M. Coon and A. Craycraft and J. Dalmasson and T. Daniels and L. Darroch and {St. Croix}, {A. De} and Mesrobian-Kabakian, {A. Der} and K. Deslandes and R. Devoe and Vacri, {M. L.DI} and J. DIlling and DIng, {Y. Y.} and Dolinski, {M. J.} and L. Doria and A. Dragone and J. Echevers and F. Edaltafar and M. Elbeltagi and L. Fabris and D. Fairbank and W. Fairbank and J. Farine and S. Ferrara and S. Feyzbakhsh and A. Fucarino and G. Gallina and P. Gautam and G. Giacomini and D. Goeldi and R. Gornea and G. Gratta and Hansen, {E. V.} and M. Heffner and Hoppe, {E. W.} and J. Hobl and A. House and M. Hughes and A. Iverson and A. Jamil and Jewell, {M. J.} and Jiang, {X. S.} and A. Karelin and Kaufman, {L. J.} and T. Koffas and R. Krucken and A. Kuchenkov and Kumar, {K. S.} and Y. Lan and A. Larson and Leach, {K. G.} and Lenardo, {B. G.} and Leonard, {D. S.} and G. Li and S. Li and Z. Li and C. Licciardi and R. MacLellan and N. Massacret and T. McElroy and M. Medina-Peregrina and T. Michel and B. Mong and Moore, {D. C.} and K. Murray and P. Nakarmi and Natzke, {C. R.} and Newby, {R. J.} and Z. Ning and O. Njoya and F. Nolet and O. Nusair and K. Odgers and A. Odian and M. Oriunno and Orrell, {J. L.} and Ortega, {G. S.} and I. Ostrovskiy and Overman, {C. T.} and S. Parent and A. Piepke and A. Pocar and Pratte, {J. F.} and V. Radeka and E. Raguzin and S. Rescia and F. Retiere and M. Richman and A. Robinson and T. Rossignol and Rowson, {P. C.} and N. Roy and J. Runge and R. Saldanha and S. Sangiorgio and K. Skarpaas and Soma, {A. K.} and G. St-Hilaire and V. Stekhanov and T. Stiegler and Sun, {X. L.} and M. Tarka and J. Todd and Totev, {T. I.} and R. Tsang and T. Tsang and F. Vachon and V. Veeraraghavan and S. Viel and G. Visser and C. Vivo-Vilches and Vuilleumier, {J. L.} and M. Wagenpfeil and T. Wager and M. Walent and Q. Wang and J. Watkins and W. Wei and U. Wichoski and Wu, {S. X.} and Wu, {W. H.} and X. Wu and Q. Xia and H. Yang and L. Yang and O. Zeldovich and J. Zhao and Y. Zhou and T. Ziegler",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = dec,

doi = "10.1109/TNS.2020.3035172",

language = "English",

volume = "67",

pages = "2501--2510",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

}

Lv, P, Cao, GF, Wen, LJ, Kharusi, SA, Anton, G, Arnquist, IJ, Badhrees, I, Barbeau, PS, Beck, D, Belov, V, Bhatta, T, Breur, PA, Brodsky, JP, Brown, E, Brunner, T, Mamahit, SB, Caden, E, Cao, L, Chambers, C, Chana, B, Charlebois, SA, Chiu, M, Cleveland, B, Coon, M, Craycraft, A, Dalmasson, J, Daniels, T, Darroch, L, St. Croix, AD, Mesrobian-Kabakian, AD, Deslandes, K, Devoe, R, Vacri, MLDI, DIlling, J, DIng, YY, Dolinski, MJ, Doria, L, Dragone, A, Echevers, J, Edaltafar, F, Elbeltagi, M, Fabris, L, Fairbank, D, Fairbank, W, Farine, J, Ferrara, S, Feyzbakhsh, S, Fucarino, A, Gallina, G, Gautam, P, Giacomini, G, Goeldi, D, Gornea, R, Gratta, G, Hansen, EV, Heffner, M, Hoppe, EW, Hobl, J, House, A, Hughes, M, Iverson, A, Jamil, A, Jewell, MJ, Jiang, XS, Karelin, A, Kaufman, LJ, Koffas, T, Krucken, R, Kuchenkov, A, Kumar, KS, Lan, Y, Larson, A, Leach, KG, Lenardo, BG, Leonard, DS, Li, G, Li, S, Li, Z, Licciardi, C, MacLellan, R, Massacret, N, McElroy, T, Medina-Peregrina, M, Michel, T, Mong, B, Moore, DC, Murray, K, Nakarmi, P, Natzke, CR, Newby, RJ, Ning, Z, Njoya, O, Nolet, F, Nusair, O, Odgers, K, Odian, A, Oriunno, M, Orrell, JL, Ortega, GS, Ostrovskiy, I, Overman, CT, Parent, S, Piepke, A, Pocar, A, Pratte, JF, Radeka, V, Raguzin, E, Rescia, S, Retiere, F, Richman, M, Robinson, A, Rossignol, T, Rowson, PC, Roy, N, Runge, J, Saldanha, R, Sangiorgio, S, Skarpaas, K, Soma, AK, St-Hilaire, G, Stekhanov, V, Stiegler, T, Sun, XL, Tarka, M, Todd, J, Totev, TI, Tsang, R, Tsang, T, Vachon, F, Veeraraghavan, V, Viel, S, Visser, G, Vivo-Vilches, C, Vuilleumier, JL, Wagenpfeil, M, Wager, T, Walent, M, Wang, Q, Watkins, J, Wei, W, Wichoski, U, Wu, SX, Wu, WH, Wu, X, Xia, Q, Yang, H, Yang, L, Zeldovich, O, Zhao, J, Zhou, Y & Ziegler, T 2020, 'Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths', IEEE Transactions on Nuclear Science, vol. 67, no. 12, 9246577, pp. 2501-2510. https://doi.org/10.1109/TNS.2020.3035172

TY - JOUR

T1 - Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

AU - Lv, P.

AU - Cao, G. F.

AU - Wen, L. J.

AU - Kharusi, S. A.

AU - Anton, G.

AU - Arnquist, I. J.

AU - Badhrees, I.

AU - Barbeau, P. S.

AU - Beck, D.

AU - Belov, V.

AU - Bhatta, T.

AU - Breur, P. A.

AU - Brodsky, J. P.

AU - Brown, E.

AU - Brunner, T.

AU - Mamahit, S. Byrne

AU - Caden, E.

AU - Cao, L.

AU - Chambers, C.

AU - Chana, B.

AU - Charlebois, S. A.

AU - Chiu, M.

AU - Cleveland, B.

AU - Coon, M.

AU - Craycraft, A.

AU - Dalmasson, J.

AU - Daniels, T.

AU - Darroch, L.

AU - St. Croix, A. De

AU - Mesrobian-Kabakian, A. Der

AU - Deslandes, K.

AU - Devoe, R.

AU - Vacri, M. L.DI

AU - DIlling, J.

AU - DIng, Y. Y.

AU - Dolinski, M. J.

AU - Doria, L.

AU - Dragone, A.

AU - Echevers, J.

AU - Edaltafar, F.

AU - Elbeltagi, M.

AU - Fabris, L.

AU - Fairbank, D.

AU - Fairbank, W.

AU - Farine, J.

AU - Ferrara, S.

AU - Feyzbakhsh, S.

AU - Fucarino, A.

AU - Gallina, G.

AU - Gautam, P.

AU - Giacomini, G.

AU - Goeldi, D.

AU - Gornea, R.

AU - Gratta, G.

AU - Hansen, E. V.

AU - Heffner, M.

AU - Hoppe, E. W.

AU - Hobl, J.

AU - House, A.

AU - Hughes, M.

AU - Iverson, A.

AU - Jamil, A.

AU - Jewell, M. J.

AU - Jiang, X. S.

AU - Karelin, A.

AU - Kaufman, L. J.

AU - Koffas, T.

AU - Krucken, R.

AU - Kuchenkov, A.

AU - Kumar, K. S.

AU - Lan, Y.

AU - Larson, A.

AU - Leach, K. G.

AU - Lenardo, B. G.

AU - Leonard, D. S.

AU - Li, G.

AU - Li, S.

AU - Li, Z.

AU - Licciardi, C.

AU - MacLellan, R.

AU - Massacret, N.

AU - McElroy, T.

AU - Medina-Peregrina, M.

AU - Michel, T.

AU - Mong, B.

AU - Moore, D. C.

AU - Murray, K.

AU - Nakarmi, P.

AU - Natzke, C. R.

AU - Newby, R. J.

AU - Ning, Z.

AU - Njoya, O.

AU - Nolet, F.

AU - Nusair, O.

AU - Odgers, K.

AU - Odian, A.

AU - Oriunno, M.

AU - Orrell, J. L.

AU - Ortega, G. S.

AU - Ostrovskiy, I.

AU - Overman, C. T.

AU - Parent, S.

AU - Piepke, A.

AU - Pocar, A.

AU - Pratte, J. F.

AU - Radeka, V.

AU - Raguzin, E.

AU - Rescia, S.

AU - Retiere, F.

AU - Richman, M.

AU - Robinson, A.

AU - Rossignol, T.

AU - Rowson, P. C.

AU - Roy, N.

AU - Runge, J.

AU - Saldanha, R.

AU - Sangiorgio, S.

AU - Skarpaas, K.

AU - Soma, A. K.

AU - St-Hilaire, G.

AU - Stekhanov, V.

AU - Stiegler, T.

AU - Sun, X. L.

AU - Tarka, M.

AU - Todd, J.

AU - Totev, T. I.

AU - Tsang, R.

AU - Tsang, T.

AU - Vachon, F.

AU - Veeraraghavan, V.

AU - Viel, S.

AU - Visser, G.

AU - Vivo-Vilches, C.

AU - Vuilleumier, J. L.

AU - Wagenpfeil, M.

AU - Wager, T.

AU - Walent, M.

AU - Wang, Q.

AU - Watkins, J.

AU - Wei, W.

AU - Wichoski, U.

AU - Wu, S. X.

AU - Wu, W. H.

AU - Wu, X.

AU - Xia, Q.

AU - Yang, H.

AU - Yang, L.

AU - Zeldovich, O.

AU - Zhao, J.

AU - Zhou, Y.

AU - Ziegler, T.

PY - 2020/12

Y1 - 2020/12

N2 - Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

AB - Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

KW - Diffuse reflectance

KW - photon detection efficiency (PDE)

KW - silicon photomultiplier (SiPM)

KW - specular reflectance

KW - vacuum ultraviolet (VUV)

UR - http://www.scopus.com/inward/record.url?scp=85097993481&partnerID=8YFLogxK

U2 - 10.1109/TNS.2020.3035172

DO - 10.1109/TNS.2020.3035172

M3 - Article

AN - SCOPUS:85097993481

SN - 0018-9499

VL - 67

SP - 2501

EP - 2510

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 12

M1 - 9246577

ER -

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

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