Reduction of defect fluxes using dual-ion-beam processing

  • A. Iwase
  • , L. E. Rehn
  • , P. M. Baldo
  • , P. R. Okamoto
  • , H. Wiedersich
  • , L. Funk

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Radiation-induced segregation (RIS) in Ni-12.7% Si and Cu-1% Au alloys was studied using Rutherford backscattering spectroscopy during He and Ne irradiation at elevated temperatures. During single ion-beam irradiation with 1.5 MeV He, strong RIS of Si toward the surface was observed in Ni-12.7% Si. Simultaneous irradiation with 400 keV Ne and 1.5 MeV He almost completely suppressed the Si segregation, even when the calculated damage production rate by Ne was only a few percent of that by He ions. A similar effect of dual-beam irradiation was observed in the Cu-1% Au alloy, i.e., the rate of near surface Au depletion was strongly reduced under simultaneous irradiation. The present result shows that dual-beam irradiation can be applied to control RIS and RED (Radiation Enhanced Diffusion) during ion beam processing.

Original languageEnglish
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages57-62
Number of pages6
ISBN (Print)1558992154
StatePublished - 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

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