Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures

K. Huynh; M. E. Liao; X. Yan; J. Tomko; T. Pfeifer; V. Dragoi; N. Razek; E. Guiot; R. Caulmilone; X. Pan; P. E. Hopkin; M. S. Goorsky

Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures

K. Huynh
, M. E. Liao
, X. Yan
, J. Tomko
, T. Pfeifer
, V. Dragoi
, N. Razek
, E. Guiot
, R. Caulmilone
, X. Pan
, P. E. Hopkin
, M. S. Goorsky

Research output: Contribution to conference › Paper › peer-review

Abstract

The evolution of structural and thermal properties of wafer bonded GaN on Si with annealing are investigated in this study. Formation of an amorphous layer at the interface of wafer bonded samples is commonly observed due to surface preparation techniques prior to bonding. Recrystallization of these interfaces have been shown for several homojunctions, but reconstruction of wafer bonded heterojunctions has additional complexities. Annealing of GaN-Si wafer bonded samples resulted in non-uniform diffusion across the interface and the formation high Ga content pyramidal features within Si. Thermal boundary conductance of the as-bonded and post annealed samples show a factor of two reduction in thermal boundary conductance after annealing. Optimization of wafer bonding techniques and subsequent annealing allows for unique materials combinations that are not limited by crystal structure considerations.

Original language	English
Pages	387-389
Number of pages	3
State	Published - 2022
Externally published	Yes
Event	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States Duration: May 9 2022 → May 12 2022

Conference

Conference	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
Country/Territory	United States
City	Monterey
Period	05/9/22 → 05/12/22

Funding

We acknowledge the financial support from Office of Naval Research MURI Grant No. N00014-18-1-2429. The authors also acknowledge the use of facilities and instrumentation at the UC Irvine Materials Research Institute (IMRI), which is supported in part by the National Science Foundation through the UC Irvine Materials Research Science and Engineering Center (DMR-2011967).

Keywords

Gallium Nitride
Heterogeneous Integration
Thermal Transport
Wafer bond

Cite this

Huynh, K., Liao, M. E., Yan, X., Tomko, J., Pfeifer, T., Dragoi, V., Razek, N., Guiot, E., Caulmilone, R., Pan, X., Hopkin, P. E., & Goorsky, M. S. (2022). Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures. 387-389. Paper presented at 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, Monterey, United States.

@conference{c837f918cf3b42e18ceee6a47629aee8,

title = "Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures",

abstract = "The evolution of structural and thermal properties of wafer bonded GaN on Si with annealing are investigated in this study. Formation of an amorphous layer at the interface of wafer bonded samples is commonly observed due to surface preparation techniques prior to bonding. Recrystallization of these interfaces have been shown for several homojunctions, but reconstruction of wafer bonded heterojunctions has additional complexities. Annealing of GaN-Si wafer bonded samples resulted in non-uniform diffusion across the interface and the formation high Ga content pyramidal features within Si. Thermal boundary conductance of the as-bonded and post annealed samples show a factor of two reduction in thermal boundary conductance after annealing. Optimization of wafer bonding techniques and subsequent annealing allows for unique materials combinations that are not limited by crystal structure considerations.",

keywords = "Gallium Nitride, Heterogeneous Integration, Thermal Transport, Wafer bond",

author = "K. Huynh and Liao, \{M. E.\} and X. Yan and J. Tomko and T. Pfeifer and V. Dragoi and N. Razek and E. Guiot and R. Caulmilone and X. Pan and Hopkin, \{P. E.\} and Goorsky, \{M. S.\}",

note = "Publisher Copyright: {\textcopyright} 2022 MANTECH 2022. All rights reserved.; 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 ; Conference date: 09-05-2022 Through 12-05-2022",

year = "2022",

language = "English",

pages = "387--389",

}

Huynh, K, Liao, ME, Yan, X, Tomko, J, Pfeifer, T, Dragoi, V, Razek, N, Guiot, E, Caulmilone, R, Pan, X, Hopkin, PE & Goorsky, MS 2022, 'Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures', Paper presented at 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, Monterey, United States, 05/9/22 - 05/12/22 pp. 387-389.

Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures. / Huynh, K.; Liao, M. E.; Yan, X. et al.
2022. 387-389 Paper presented at 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, Monterey, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures

AU - Huynh, K.

AU - Liao, M. E.

AU - Yan, X.

AU - Tomko, J.

AU - Pfeifer, T.

AU - Dragoi, V.

AU - Razek, N.

AU - Guiot, E.

AU - Caulmilone, R.

AU - Pan, X.

AU - Hopkin, P. E.

AU - Goorsky, M. S.

PY - 2022

Y1 - 2022

N2 - The evolution of structural and thermal properties of wafer bonded GaN on Si with annealing are investigated in this study. Formation of an amorphous layer at the interface of wafer bonded samples is commonly observed due to surface preparation techniques prior to bonding. Recrystallization of these interfaces have been shown for several homojunctions, but reconstruction of wafer bonded heterojunctions has additional complexities. Annealing of GaN-Si wafer bonded samples resulted in non-uniform diffusion across the interface and the formation high Ga content pyramidal features within Si. Thermal boundary conductance of the as-bonded and post annealed samples show a factor of two reduction in thermal boundary conductance after annealing. Optimization of wafer bonding techniques and subsequent annealing allows for unique materials combinations that are not limited by crystal structure considerations.

AB - The evolution of structural and thermal properties of wafer bonded GaN on Si with annealing are investigated in this study. Formation of an amorphous layer at the interface of wafer bonded samples is commonly observed due to surface preparation techniques prior to bonding. Recrystallization of these interfaces have been shown for several homojunctions, but reconstruction of wafer bonded heterojunctions has additional complexities. Annealing of GaN-Si wafer bonded samples resulted in non-uniform diffusion across the interface and the formation high Ga content pyramidal features within Si. Thermal boundary conductance of the as-bonded and post annealed samples show a factor of two reduction in thermal boundary conductance after annealing. Optimization of wafer bonding techniques and subsequent annealing allows for unique materials combinations that are not limited by crystal structure considerations.

KW - Gallium Nitride

KW - Heterogeneous Integration

KW - Thermal Transport

KW - Wafer bond

UR - https://www.scopus.com/pages/publications/85144139914

M3 - Paper

AN - SCOPUS:85144139914

SP - 387

EP - 389

T2 - 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022

Y2 - 9 May 2022 through 12 May 2022

ER -

Reduction in Thermal Boundary Conductance of Direct Wafer Bonded GaN|Si Heterojunction Interfaces Annealed at High Temperatures

Abstract

Conference

Funding

Keywords

Other files and links

Fingerprint

Cite this