Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Nikesh Koirala; Matthew Brahlek; Maryam Salehi; Liang Wu; Jixia Dai; Justin Waugh; Thomas Nummy; Myung Geun Han; Jisoo Moon; Yimei Zhu; Daniel Dessau; Weida Wu; N. Peter Armitage; Seongshik Oh

doi:10.1021/acs.nanolett.5b03770

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Nikesh Koirala, Matthew Brahlek, Maryam Salehi, Liang Wu, Jixia Dai, Justin Waugh, Thomas Nummy, Myung Geun Han, Jisoo Moon, Yimei Zhu, Daniel Dessau, Weida Wu, N. Peter Armitage, Seongshik Oh

Quantum Heterostructures

Research output: Contribution to journal › Article › peer-review

133 Scopus citations

Abstract

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In₂Se₃/(Bi_0.5In_0.5)₂Se₃ heterostructure, we introduce a quantum generation of Bi₂Se₃ films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi₂Se₃.

Original language	English
Pages (from-to)	8245-8249
Number of pages	5
Journal	Nano Letters
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acs.nanolett.5b03770
State	Published - Dec 9 2015

Keywords

Topological insulator
heterostructure
molecular beam epitaxy
quantum Hall effect
thin films

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10.1021/acs.nanolett.5b03770

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title = "Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering",

abstract = "Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.",

keywords = "Topological insulator, heterostructure, molecular beam epitaxy, quantum Hall effect, thin films",

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AU - Koirala, Nikesh

AU - Brahlek, Matthew

AU - Salehi, Maryam

AU - Wu, Liang

AU - Dai, Jixia

AU - Waugh, Justin

AU - Nummy, Thomas

AU - Han, Myung Geun

AU - Moon, Jisoo

AU - Zhu, Yimei

AU - Dessau, Daniel

AU - Wu, Weida

AU - Armitage, N. Peter

AU - Oh, Seongshik

PY - 2015/12/9

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AB - Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

KW - Topological insulator

KW - heterostructure

KW - molecular beam epitaxy

KW - quantum Hall effect

KW - thin films

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Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

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Keywords

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