@inproceedings{f6ded172a013444d9adb6848339374d5,
title = "Real-time in situ monitoring of defect evolution at wide gap II-VI/GaAs heterointerfaces during epitaxial growth",
abstract = "We report the real-time in situ observation of heterointerface dislocation formation during the growth of lattice-mismatched widegap II-VI/GaAs heterostructures. Such observations were made by employing a near-normal incidence HeNe laser probe during epitaxial growth which generated both a laser reflection interferometry (LRI) signal as well as an elastically scattered laser light (ELLS) signal. We believe that the scattered light signal is generated at the II-VI/GaAs heterointerface based on the observation of a π phase difference between the LRI and the ELLS signals which were monitored simultaneously. We suggest, therefore, that the observed ELLS signal is a consequence of dislocation formation at the heterointerface which occurs due to plastic deformation in lattice-mismatched systems.",
author = "Rouleau, {C. M.} and Park, {R. M.}",
year = "1994",
language = "English",
isbn = "1558992235",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "125--131",
booktitle = "Diagnostic Techniques for Semiconductor Materials Processing",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}