@inproceedings{8cbaf367727943dbb7a3e2b0336d9201,
title = "Readiness of SiC MOSFETs for aerospace and industrial applications",
abstract = "This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application examples are highlighted. The first demonstrates the 1.2kV device performance in a prototype high frequency 75kW Aviation motor drive. The second highlights the experimental demonstration of a 99% efficient 1.0MW solar inverter using 1.7kV MOSFET modules in a two-level topology switching at 8kHz. Both applications illustrate that SiC advantage is not only in improved performance, but also in significant system cost savings through simplifications in topology, controls, cooling and filtering.",
keywords = "Aerospace, Applications, Efficiency, Industrial, Reliability, Ruggedness, SiC MOSFET",
author = "Ljubisa Stevanovic and Peter Losee and Stacey Kennerly and Alexander Bolotnikov and Brian Rowden and Joe Smolenski and Maja Harfman-Todorovic and Rajib Datta and Stephen Arthur and David Lilienfeld and Tobias Schuetz and Fabio Carastro and Tao, {Feng Feng} and David Esler and Ravi Raju and Greg Dunne and Philip Cioffi and Yu, {Liang Chun}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.894",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "894--899",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and {La Via}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}