Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film

W. K. Kim; E. A. Payzant; S. Kim; S. A. Speakman; O. D. Crisalle; T. J. Anderson

doi:10.1016/j.jcrysgro.2008.01.034

Reaction kinetics of CuGaSe₂ formation from a GaSe/CuSe bilayer precursor film

W. K. Kim, E. A. Payzant, S. Kim, S. A. Speakman, O. D. Crisalle, T. J. Anderson

Materials Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The reaction pathway and kinetics of CuGaSe₂ formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to β-Cu_2-xSe at around 230 °C, followed by CuGaSe₂ formation accompanied by a decrease in the β-Cu_2-xSe peak intensity at around 260 °C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 °C) of the set of isothermal experiments with estimated activation energies of 115(±16) and 124(±19) kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe₂ forms at the interface of the initial GaSe and CuSe layers.

Original language	English
Pages (from-to)	2987-2994
Number of pages	8
Journal	Journal of Crystal Growth
Volume	310
Issue number	12
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.01.034
State	Published - Jun 1 2008

Funding

The authors gratefully acknowledge the financial support of DOE/NREL High-Performance Photovoltaic Program, under Subcontract no. XAT-4-33624-15. The authors also appreciate sponsorship, in part, by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under Contract no. DE-AC05-00OR22725. The authors thank Ryan Acher and Ryan Kaczynski for supporting the precursor preparation, Dr. Gerald R. Bourne for preparing the TEM samples, and Kerry Siebein for TEM-EDS analysis at the University of Florida's Major Analytical Instrumentation Center.

Funders	Funder number
National Renewable Energy Laboratory
US Department of Energy
UT-Battelle
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

Keywords

A1. Growth models
A1. X-ray diffraction
B1. Copper gallium diselenide
B3. Solar cells

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10.1016/j.jcrysgro.2008.01.034

Cite this

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title = "Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film",

abstract = "The reaction pathway and kinetics of CuGaSe2 formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to β-Cu2-xSe at around 230 °C, followed by CuGaSe2 formation accompanied by a decrease in the β-Cu2-xSe peak intensity at around 260 °C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 °C) of the set of isothermal experiments with estimated activation energies of 115(±16) and 124(±19) kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe2 forms at the interface of the initial GaSe and CuSe layers.",

keywords = "A1. Growth models, A1. X-ray diffraction, B1. Copper gallium diselenide, B3. Solar cells",

author = "Kim, {W. K.} and Payzant, {E. A.} and S. Kim and Speakman, {S. A.} and Crisalle, {O. D.} and Anderson, {T. J.}",

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AU - Payzant, E. A.

AU - Kim, S.

AU - Speakman, S. A.

AU - Crisalle, O. D.

AU - Anderson, T. J.

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N2 - The reaction pathway and kinetics of CuGaSe2 formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to β-Cu2-xSe at around 230 °C, followed by CuGaSe2 formation accompanied by a decrease in the β-Cu2-xSe peak intensity at around 260 °C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 °C) of the set of isothermal experiments with estimated activation energies of 115(±16) and 124(±19) kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe2 forms at the interface of the initial GaSe and CuSe layers.

AB - The reaction pathway and kinetics of CuGaSe2 formation were investigated by monitoring the phase evolution of temperature ramp annealed or isothermally soaked bilayer glass/GaSe/CuSe precursor film using time-resolved, in situ high-temperature X-ray diffraction. Bilayer GaSe/CuSe precursor films were deposited on alkali-free thin glass substrates in a migration-enhanced epitaxial deposition system. The initial CuSe phase begins to transform to β-Cu2-xSe at around 230 °C, followed by CuGaSe2 formation accompanied by a decrease in the β-Cu2-xSe peak intensity at around 260 °C. Both the parabolic and Avrami diffusion-controlled reaction models represented the experimental data very well over the entire temperature range (280-370 °C) of the set of isothermal experiments with estimated activation energies of 115(±16) and 124(±19) kJ/mol, respectively. Transmission electron microscopy-energy-dispersive X-ray spectrometry (TEM-EDS) analysis suggests that CuGaSe2 forms at the interface of the initial GaSe and CuSe layers.

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