Abstract
Silicon-germanium alloys are found to be simple model systems for studying the effects of melting temperature changes on the liquid-solid interface dynamics during pulsed laser melting. The melting temperature of these alloys can be continuously varied from 1210 to 1685 K. An alloy of Si5 0Ge50 is shown to closely model the melting kinetics of amorphous silicon. By tailoring the melting temperature versus depth with multilayer structures, the effects of superheating, undercooling, and thermal conductivity on the solidification dynamics have been studied.
| Original language | English |
|---|---|
| Pages (from-to) | 558-560 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 49 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1986 |
| Externally published | Yes |
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