Raman study on the phase transformations of the meta-stable phases of Si induced by indentation

B. C. Johnson, N. Stavrias, B. Haberl, Leonardus B.Bayu Aji, J. E. Bradby, J. C. McCallum, J. S. Williams

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.

Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages89-90
Number of pages2
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia
Duration: Dec 12 2012Dec 14 2012

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/TerritoryAustralia
CityMelbourne, VIC
Period12/12/1212/14/12

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