Raman and FTIR studies on nanostructure formation on silicon carbide

I. Muntele; C. I. Muntele; D. Ila; D. B. Poker; D. K. Hensley

doi:10.1109/IIT.2002.1258105

Raman and FTIR studies on nanostructure formation on silicon carbide

I. Muntele, C. I. Muntele, D. Ila, D. B. Poker, D. K. Hensley

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report experimental results following studies on the defects induced by light and heavy high-energy ion implantation into 6H p-type and n-type silicon carbide, as well as the degree of crystalline lattice recovery after annealing in high purity argon environment at 1100 and 1600°C. We implanted silicon carbide with MeV Au and Al ions at levels of 10¹⁶ and 10¹⁷ ions/cm², and used confocal micro-Raman (MR) and Fourier-Transform Infra-Red (FTIR) optical spectroscopy techniques to characterize the silicon carbide lattice optical properties at various stages during the post-implantation annealing process. We also investigated the conditions for metallic nanoclusters formation following the destruction of the lattice during the ion implantation and influence of the thermal treatment on their evolution.

Original language	English
Title of host publication	2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings
Editors	Bob Brown, Terry L. Alford, Mike Nastasi, Michael C. Vella
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	713-715
Number of pages	3
ISBN (Electronic)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1258105
State	Published - 2002
Event	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States Duration: Sep 22 2002 → Sep 27 2002

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	22-27-September-2002

Conference

Conference	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
Country/Territory	United States
City	Taos
Period	09/22/02 → 09/27/02

Keywords

Silicon carbide
ion implantation
nanoclusters

Access to Document

10.1109/IIT.2002.1258105

Cite this

Muntele, I., Muntele, C. I., Ila, D., Poker, D. B., & Hensley, D. K. (2002). Raman and FTIR studies on nanostructure formation on silicon carbide. In B. Brown, T. L. Alford, M. Nastasi, & M. C. Vella (Eds.), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings (pp. 713-715). Article 1258105 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2002.1258105

Muntele, I. ; Muntele, C. I. ; Ila, D. et al. / Raman and FTIR studies on nanostructure formation on silicon carbide. 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. editor / Bob Brown ; Terry L. Alford ; Mike Nastasi ; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 713-715 (Proceedings of the International Conference on Ion Implantation Technology).

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title = "Raman and FTIR studies on nanostructure formation on silicon carbide",

abstract = "We report experimental results following studies on the defects induced by light and heavy high-energy ion implantation into 6H p-type and n-type silicon carbide, as well as the degree of crystalline lattice recovery after annealing in high purity argon environment at 1100 and 1600°C. We implanted silicon carbide with MeV Au and Al ions at levels of 1016 and 1017 ions/cm2, and used confocal micro-Raman (MR) and Fourier-Transform Infra-Red (FTIR) optical spectroscopy techniques to characterize the silicon carbide lattice optical properties at various stages during the post-implantation annealing process. We also investigated the conditions for metallic nanoclusters formation following the destruction of the lattice during the ion implantation and influence of the thermal treatment on their evolution.",

keywords = "Silicon carbide, ion implantation, nanoclusters",

author = "I. Muntele and Muntele, {C. I.} and D. Ila and Poker, {D. B.} and Hensley, {D. K.}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",

year = "2002",

doi = "10.1109/IIT.2002.1258105",

language = "English",

series = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "713--715",

editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",

booktitle = "2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings",

}

Muntele, I, Muntele, CI, Ila, D, Poker, DB & Hensley, DK 2002, Raman and FTIR studies on nanostructure formation on silicon carbide. in B Brown, TL Alford, M Nastasi & MC Vella (eds), 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings., 1258105, Proceedings of the International Conference on Ion Implantation Technology, vol. 22-27-September-2002, Institute of Electrical and Electronics Engineers Inc., pp. 713-715, 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002, Taos, United States, 09/22/02. https://doi.org/10.1109/IIT.2002.1258105

Raman and FTIR studies on nanostructure formation on silicon carbide. / Muntele, I.; Muntele, C. I.; Ila, D. et al.
2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. ed. / Bob Brown; Terry L. Alford; Mike Nastasi; Michael C. Vella. Institute of Electrical and Electronics Engineers Inc., 2002. p. 713-715 1258105 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 22-27-September-2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We report experimental results following studies on the defects induced by light and heavy high-energy ion implantation into 6H p-type and n-type silicon carbide, as well as the degree of crystalline lattice recovery after annealing in high purity argon environment at 1100 and 1600°C. We implanted silicon carbide with MeV Au and Al ions at levels of 1016 and 1017 ions/cm2, and used confocal micro-Raman (MR) and Fourier-Transform Infra-Red (FTIR) optical spectroscopy techniques to characterize the silicon carbide lattice optical properties at various stages during the post-implantation annealing process. We also investigated the conditions for metallic nanoclusters formation following the destruction of the lattice during the ion implantation and influence of the thermal treatment on their evolution.

AB - We report experimental results following studies on the defects induced by light and heavy high-energy ion implantation into 6H p-type and n-type silicon carbide, as well as the degree of crystalline lattice recovery after annealing in high purity argon environment at 1100 and 1600°C. We implanted silicon carbide with MeV Au and Al ions at levels of 1016 and 1017 ions/cm2, and used confocal micro-Raman (MR) and Fourier-Transform Infra-Red (FTIR) optical spectroscopy techniques to characterize the silicon carbide lattice optical properties at various stages during the post-implantation annealing process. We also investigated the conditions for metallic nanoclusters formation following the destruction of the lattice during the ion implantation and influence of the thermal treatment on their evolution.

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Muntele I, Muntele CI, Ila D, Poker DB, Hensley DK. Raman and FTIR studies on nanostructure formation on silicon carbide. In Brown B, Alford TL, Nastasi M, Vella MC, editors, 2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 713-715. 1258105. (Proceedings of the International Conference on Ion Implantation Technology). doi: 10.1109/IIT.2002.1258105

Raman and FTIR studies on nanostructure formation on silicon carbide

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Keywords

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