Rainflow algorithm based lifetime estimation of power semiconductors in utility applications

Lakshmi Gopi Reddy, Leon M. Tolbert, Burak Ozpineci, João O.P. Pinto

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Rainflow algorithms are one of the best counting methods used in fatigue and failure analysis popularly used in semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al is applied to semiconductor lifetime estimation for the first time in this paper. A month long arc furnace load profile is used as a test profile to estimate temperatures in IGBT in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time dependent temperature calculation.

Original languageEnglish
Title of host publicationAPEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2293-2299
Number of pages7
ISBN (Print)9781479923250
DOIs
StatePublished - 2014
Event29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014 - Fort Worth, TX, United States
Duration: Mar 16 2014Mar 20 2014

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014
Country/TerritoryUnited States
CityFort Worth, TX
Period03/16/1403/20/14

Keywords

  • Cycle counting
  • STATCOM
  • lifetime estimation
  • power semiconductor reliability
  • rainflow algorithms

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