Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Lakshmi Reddy GopiReddy, Leon M. Tolbert, Burak Ozpineci, João O.P. Pinto

Research output: Contribution to journalArticlepeer-review

107 Scopus citations

Abstract

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

Original languageEnglish
Article number07050286
Pages (from-to)3368-3375
Number of pages8
JournalIEEE Transactions on Industry Applications
Volume51
Issue number4
DOIs
StatePublished - Jul 1 2015

Funding

FundersFunder number
National Science Foundation
U.S. Department of Energy

    Keywords

    • Cycle counting
    • STATCOM
    • lifetime estimation
    • power semiconductor reliability
    • rainflow algorithms

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