Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Lakshmi Reddy GopiReddy; Leon M. Tolbert; Burak Ozpineci; João O.P. Pinto

doi:10.1109/TIA.2015.2407055

Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Lakshmi Reddy GopiReddy, Leon M. Tolbert, Burak Ozpineci, João O.P. Pinto

Buildings and Transportation Science Div

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

Original language	English
Article number	07050286
Pages (from-to)	3368-3375
Number of pages	8
Journal	IEEE Transactions on Industry Applications
Volume	51
Issue number	4
DOIs	https://doi.org/10.1109/TIA.2015.2407055
State	Published - Jul 1 2015

Keywords

Cycle counting
STATCOM
lifetime estimation
power semiconductor reliability
rainflow algorithms

Access to Document

10.1109/TIA.2015.2407055

Cite this

@article{ee23cf80ec6b40e0836758e73794f4dc,

title = "Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications",

abstract = "Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.",

keywords = "Cycle counting, STATCOM, lifetime estimation, power semiconductor reliability, rainflow algorithms",

author = "GopiReddy, {Lakshmi Reddy} and Tolbert, {Leon M.} and Burak Ozpineci and Pinto, {Jo{\~a}o O.P.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/TIA.2015.2407055",

language = "English",

volume = "51",

pages = "3368--3375",

journal = "IEEE Transactions on Industry Applications",

issn = "0093-9994",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4",

}

TY - JOUR

T1 - Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

AU - GopiReddy, Lakshmi Reddy

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

AU - Pinto, João O.P.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

AB - Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rainflow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

KW - Cycle counting

KW - STATCOM

KW - lifetime estimation

KW - power semiconductor reliability

KW - rainflow algorithms

UR - http://www.scopus.com/inward/record.url?scp=84937890389&partnerID=8YFLogxK

U2 - 10.1109/TIA.2015.2407055

DO - 10.1109/TIA.2015.2407055

M3 - Article

AN - SCOPUS:84937890389

SN - 0093-9994

VL - 51

SP - 3368

EP - 3375

JO - IEEE Transactions on Industry Applications

JF - IEEE Transactions on Industry Applications

IS - 4

M1 - 07050286

ER -

Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this