Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India

Geetika Jain; Chakresh Jain; Ashutosh Bhardwaj; Kirti Ranjan; Alexander Dierlamm; Frank Hartmann; Marcel Demarteau

doi:10.1016/j.nima.2018.10.118

Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India

Geetika Jain, Chakresh Jain, Ashutosh Bhardwaj, Kirti Ranjan, Alexander Dierlamm, Frank Hartmann, Marcel Demarteau

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The silicon sensors to be deployed in the next generation high energy physics experiments for operation in high luminosity scenarios, will require a high level of radiation tolerance. AC-coupled silicon strip sensors integrated with biasing poly-silicon resistors have been fabricated in collaboration with the Bharat Electronics Limited foundry using 4 inch n-type wafers in p-on-n configuration. Several sensors were irradiated with protons at different fluences at the Karlsruhe Cyclotron facility under the Advanced European Infrastructures for Detectors at Accelerators (AIDA) program. This paper reports on these radiation hardness study performed on the AC-coupled silicon sensors fabricated in India. The characterization comprises of electrical tests, including total current, voltage and strip scans and charge collection studies.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	913
DOIs	https://doi.org/10.1016/j.nima.2018.10.118
State	Published - Jan 1 2019
Externally published	Yes

Funding

The authors would like to thank Mr. Y. P. Prabhakara Rao and Ms. Rejeena Rani from BEL for the fabrication of the sensors. We are also thankful to the irradiation team at ZAG, Karlsruhe for the irradiations of the sensors. This project has received funding from the European Union’s Horizon AIDA 2020 Research and Innovation programme under Grant Agreement no. 654168 . Additionally we would like to acknowledge DST, India (ref. no. SR/MF/PS-02/2014-DUA (C) and SR/MF/PS-02/2014-DUA (G)), R&D grant University of Delhi, India , CSIR, India and UGC, India (ref. no. Schs/SRF/AA/139/F-203/2013-14) for financial support. The authors would like to thank Mr. Y. P. Prabhakara Rao and Ms. Rejeena Rani from BEL for the fabrication of the sensors. We are also thankful to the irradiation team at ZAG, Karlsruhe for the irradiations of the sensors. This project has received funding from the European Union's Horizon AIDA 2020 Research and Innovation programme under Grant Agreement no. 654168. Additionally we would like to acknowledge DST, India (ref. no. SR/MF/PS-02/2014-DUA (C) and SR/MF/PS-02/2014-DUA (G)), R&D grant University of Delhi, India, CSIR, India and UGC, India (ref. no. Schs/SRF/AA/139/F-203/2013-14) for financial support.

Funders	Funder number
University of Delhi, India
Council of Scientific and Industrial Research, India
University Grants Commission
University Grants Committee	Schs/SRF/AA/139/F-203/2013-14
University of Delhi
Department of Science and Technology, Government of West Bengal	SR/MF/PS-02/2014-DUA, SR/MF/PS-02/2014-DUA (G)
CSIR-Central Institute of Mining and Fuel Research
Department of Science and Technology, Government of Rajasthan

Keywords

AC-coupled
Characterization
Irradiation
Silicon sensors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.nima.2018.10.118

Cite this

Jain, G., Jain, C., Bhardwaj, A., Ranjan, K., Dierlamm, A., Hartmann, F., & Demarteau, M. (2019). Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 913, 97-102. https://doi.org/10.1016/j.nima.2018.10.118

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abstract = "The silicon sensors to be deployed in the next generation high energy physics experiments for operation in high luminosity scenarios, will require a high level of radiation tolerance. AC-coupled silicon strip sensors integrated with biasing poly-silicon resistors have been fabricated in collaboration with the Bharat Electronics Limited foundry using 4 inch n-type wafers in p-on-n configuration. Several sensors were irradiated with protons at different fluences at the Karlsruhe Cyclotron facility under the Advanced European Infrastructures for Detectors at Accelerators (AIDA) program. This paper reports on these radiation hardness study performed on the AC-coupled silicon sensors fabricated in India. The characterization comprises of electrical tests, including total current, voltage and strip scans and charge collection studies.",

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author = "Geetika Jain and Chakresh Jain and Ashutosh Bhardwaj and Kirti Ranjan and Alexander Dierlamm and Frank Hartmann and Marcel Demarteau",

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Jain, G, Jain, C, Bhardwaj, A, Ranjan, K, Dierlamm, A, Hartmann, F & Demarteau, M 2019, 'Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 913, pp. 97-102. https://doi.org/10.1016/j.nima.2018.10.118

Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India. / Jain, Geetika; Jain, Chakresh; Bhardwaj, Ashutosh et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 913, 01.01.2019, p. 97-102.

Research output: Contribution to journal › Article › peer-review

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AU - Jain, Geetika

AU - Jain, Chakresh

AU - Bhardwaj, Ashutosh

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AU - Dierlamm, Alexander

AU - Hartmann, Frank

AU - Demarteau, Marcel

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Jain G, Jain C, Bhardwaj A, Ranjan K, Dierlamm A, Hartmann F et al. Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2019 Jan 1;913:97-102. doi: 10.1016/j.nima.2018.10.118

Radiation tolerance study on irradiated AC-coupled, poly-silicon biased, p-on-n silicon strip sensors developed in India

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Keywords

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