Radiation-induced grain subdivision of U                         3                         Si                         2                          irradiated by 300 keV Xe                         +                          at LWR temperature

Tiankai Yao; Bowen Gong; Lingfeng He; Jason Harp; Michael Tonks; Jie Lian

Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature

Tiankai Yao, Bowen Gong, Lingfeng He, Jason Harp, Michael Tonks, Jie Lian

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	143-144
Number of pages	2
Journal	Transactions of the American Nuclear Society
Volume	117
State	Published - 2017
Externally published	Yes
Event	2017 Transactions of the American Nuclear Society, ANS 2017 - Washington, United States Duration: Oct 29 2017 → Nov 2 2017

Funding

This work was supported by the U.S. Department of Energy, Office of Nuclear Energy under a Nuclear Engineer University Program (award number: DE-NE0008564) and a NSUF RTE award (award number: 17-835) under DOE Idaho Operations Office Contract DE-AC07-051D14517 as part of a Nuclear Science User Facilities Experiments. JL also acknowledges the support from a NSF Career Award (award #: DMR 1151028) for the study of radiation interaction with nanostructured oxides.

Funders	Funder number
NSUF	17-835
Nuclear Engineer University Program
National Science Foundation	DMR 1151028
U.S. Department of Energy
Office of Nuclear Energy
Office of Emergency Operations	DE-AC07-051D14517
Office of Nuclear Facility Operations
Nuclear Energy University Program	DE-NE0008564
Nova Southeastern University
Biffa Award

Cite this

Yao, T., Gong, B., He, L., Harp, J., Tonks, M., & Lian, J. (2017). Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature Transactions of the American Nuclear Society, 117, 143-144.

Yao, Tiankai ; Gong, Bowen ; He, Lingfeng et al. / Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature In: Transactions of the American Nuclear Society. 2017 ; Vol. 117. pp. 143-144.

@article{e285625912a840ec9418a6805302db0a,

title = " Radiation-induced grain subdivision of U 3 Si 2 irradiated by 300 keV Xe + at LWR temperature ",

author = "Tiankai Yao and Bowen Gong and Lingfeng He and Jason Harp and Michael Tonks and Jie Lian",

year = "2017",

language = "English",

volume = "117",

pages = "143--144",

journal = "Transactions of the American Nuclear Society",

issn = "0003-018X",

note = "2017 Transactions of the American Nuclear Society, ANS 2017 ; Conference date: 29-10-2017 Through 02-11-2017",

}

Yao, T, Gong, B, He, L, Harp, J, Tonks, M & Lian, J 2017, ' Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature ', Transactions of the American Nuclear Society, vol. 117, pp. 143-144.

Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature . / Yao, Tiankai; Gong, Bowen; He, Lingfeng et al.
In: Transactions of the American Nuclear Society, Vol. 117, 2017, p. 143-144.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Radiation-induced grain subdivision of U 3 Si 2 irradiated by 300 keV Xe + at LWR temperature

AU - Yao, Tiankai

AU - Gong, Bowen

AU - He, Lingfeng

AU - Harp, Jason

AU - Tonks, Michael

AU - Lian, Jie

PY - 2017

Y1 - 2017

UR - http://www.scopus.com/inward/record.url?scp=85062046240&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85062046240

SN - 0003-018X

VL - 117

SP - 143

EP - 144

JO - Transactions of the American Nuclear Society

JF - Transactions of the American Nuclear Society

T2 - 2017 Transactions of the American Nuclear Society, ANS 2017

Y2 - 29 October 2017 through 2 November 2017

ER -

Yao T, Gong B, He L, Harp J, Tonks M, Lian J. Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature Transactions of the American Nuclear Society. 2017;117:143-144.

Radiation-induced grain subdivision of U 3 Si 2 irradiated by 300 keV Xe + at LWR temperature

Funding

Other files and links

Cite this

Radiation-induced grain subdivision of U ₃ Si ₂ irradiated by 300 keV Xe ⁺ at LWR temperature