Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

E. J. Kennedy; G. T. Alley; C. L. Britton; P. L. Skubic; B. Gray; A. Wu

doi:10.1016/0168-9002(91)90217-E

Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

E. J. Kennedy
, G. T. Alley
, C. L. Britton
, P. L. Skubic
, B. Gray
, A. Wu

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are pre.

Original language	English
Pages (from-to)	452-457
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	307
Issue number	2-3
DOIs	https://doi.org/10.1016/0168-9002(91)90217-E
State	Published - Oct 1 1991

Funding

The operating environment anticipated for the Superconducting Super Collider (SSC) is a very harsh operating regime. The proposed event period of 16 ns demands very high frequency performance from electronic circuits, yet the need for thousands of circuits absolutely requires a low power operating budget. Additionally, an absolute limitation to circuit performance is the radiation due primarily to gamma and neutron bombardments that can exceed a total dose of 1 Mrad (gamma) and 1013 neutrons/cm 2 in a typical year of operation, dependent upon the distance from the beam [1]. This article reports research conducted at the Oak Ridge National Laboratory (ORNL) =1 and The University of Tennessee, Knoxville, which was primarily concerned with gamma radiation total-dose effects on * This research was funded by the DOE SSC Generic Detec-tor Program. ~*l The Oak Ridge National Laboratory is operated for the U.S. Department of Energy by Martin Marietta Energy Systems under contract No. DE-AC05-84OR21400.

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Kennedy, E. J., Alley, G. T., Britton, C. L., Skubic, P. L., Gray, B., & Wu, A. (1991). Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 307(2-3), 452-457. https://doi.org/10.1016/0168-9002(91)90217-E

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title = "Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design",

abstract = "Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are pre.",

author = "Kennedy, \{E. J.\} and Alley, \{G. T.\} and Britton, \{C. L.\} and Skubic, \{P. L.\} and B. Gray and A. Wu",

year = "1991",

month = oct,

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doi = "10.1016/0168-9002(91)90217-E",

language = "English",

volume = "307",

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Kennedy, EJ, Alley, GT, Britton, CL, Skubic, PL, Gray, B & Wu, A 1991, 'Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 307, no. 2-3, pp. 452-457. https://doi.org/10.1016/0168-9002(91)90217-E

Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design. / Kennedy, E. J.; Alley, G. T.; Britton, C. L. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 307, No. 2-3, 01.10.1991, p. 452-457.

Research output: Contribution to journal › Article › peer-review

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T1 - Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

AU - Kennedy, E. J.

AU - Alley, G. T.

AU - Britton, C. L.

AU - Skubic, P. L.

AU - Gray, B.

AU - Wu, A.

PY - 1991/10/1

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VL - 307

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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ER -

Radiation effects on JFETS, MOSFETS, and bipolar transistors, as related to SSC circuit design

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