Abstract
Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are pre.
| Original language | English |
|---|---|
| Pages (from-to) | 452-457 |
| Number of pages | 6 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 307 |
| Issue number | 2-3 |
| DOIs | |
| State | Published - Oct 1 1991 |
Funding
The operating environment anticipated for the Superconducting Super Collider (SSC) is a very harsh operating regime. The proposed event period of 16 ns demands very high frequency performance from electronic circuits, yet the need for thousands of circuits absolutely requires a low power operating budget. Additionally, an absolute limitation to circuit performance is the radiation due primarily to gamma and neutron bombardments that can exceed a total dose of 1 Mrad (gamma) and 1013 neutrons/cm 2 in a typical year of operation, dependent upon the distance from the beam \[1\]. This article reports research conducted at the Oak Ridge National Laboratory (ORNL) =1 and The University of Tennessee, Knoxville, which was primarily concerned with gamma radiation total-dose effects on * This research was funded by the DOE SSC Generic Detec-tor Program. ~*l The Oak Ridge National Laboratory is operated for the U.S. Department of Energy by Martin Marietta Energy Systems under contract No. DE-AC05-84OR21400.