Radiation damage studies with star silicon drift detectors

J. Takahashi; R. Bellwied; R. Beuttenmueller; W. Chen; B. Dezillie; V. Eremin; D. Elliot; G. W. Hoffmann; W. Huang; T. Humanic; I. Ilyashenko; I. V. Kotov; P. Kuczcwski; W. Leouhasdt; Z. Li; D. Lynn; S. U. Pandey; J. Schambach; R. Soja; E. Sugarbaker; L. J. Zhao; R. M. Willson

doi:10.1109/23.856715

Radiation damage studies with star silicon drift detectors

J. Takahashi, R. Bellwied, R. Beuttenmueller, W. Chen, B. Dezillie, V. Eremin, D. Elliot, G. W. Hoffmann, W. Huang, T. Humanic, I. Ilyashenko, I. V. Kotov, P. Kuczcwski, W. Leouhasdt, Z. Li, D. Lynn, S. U. Pandey, J. Schambach, R. Soja, E. SugarbakerL. J. Zhao, R. M. Willson

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Large (6,3 × 6. 3cm²) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collidcr. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 10n - 1012/cm2, 1 MeV equivalent neutrons and 101° - 1012/on2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics.

Original language	English
Pages (from-to)	903-907
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	47
DOIs	https://doi.org/10.1109/23.856715
State	Published - 2000
Externally published	Yes

Funding

wc arc gratcruul for lhc partial support given the us Dcpartinent of Encrgy through grant DE-AC02-98CH10886 and DE-FQ'2-92ER40713, RH'' R&D (STAR) the Robert A. Welch Foundation, and the National Science Foundation through grant PHY-9511850.

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Takahashi, J., Bellwied, R., Beuttenmueller, R., Chen, W., Dezillie, B., Eremin, V., Elliot, D., Hoffmann, G. W., Huang, W., Humanic, T., Ilyashenko, I., Kotov, I. V., Kuczcwski, P., Leouhasdt, W., Li, Z., Lynn, D., Pandey, S. U., Schambach, J., Soja, R., ... Willson, R. M. (2000). Radiation damage studies with star silicon drift detectors. IEEE Transactions on Nuclear Science, 47, 903-907. https://doi.org/10.1109/23.856715

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title = "Radiation damage studies with star silicon drift detectors",

abstract = "Large (6,3 × 6. 3cm2) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collidcr. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 10n - 1012/cm2, 1 MeV equivalent neutrons and 101° - 1012/on2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics.",

author = "J. Takahashi and R. Bellwied and R. Beuttenmueller and W. Chen and B. Dezillie and V. Eremin and D. Elliot and Hoffmann, {G. W.} and W. Huang and T. Humanic and I. Ilyashenko and Kotov, {I. V.} and P. Kuczcwski and W. Leouhasdt and Z. Li and D. Lynn and Pandey, {S. U.} and J. Schambach and R. Soja and E. Sugarbaker and Zhao, {L. J.} and Willson, {R. M.}",

year = "2000",

doi = "10.1109/23.856715",

language = "English",

volume = "47",

pages = "903--907",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers",

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Takahashi, J, Bellwied, R, Beuttenmueller, R, Chen, W, Dezillie, B, Eremin, V, Elliot, D, Hoffmann, GW, Huang, W, Humanic, T, Ilyashenko, I, Kotov, IV, Kuczcwski, P, Leouhasdt, W, Li, Z, Lynn, D, Pandey, SU, Schambach, J, Soja, R, Sugarbaker, E, Zhao, LJ & Willson, RM 2000, 'Radiation damage studies with star silicon drift detectors', IEEE Transactions on Nuclear Science, vol. 47, pp. 903-907. https://doi.org/10.1109/23.856715

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T1 - Radiation damage studies with star silicon drift detectors

AU - Takahashi, J.

AU - Bellwied, R.

AU - Beuttenmueller, R.

AU - Chen, W.

AU - Dezillie, B.

AU - Eremin, V.

AU - Elliot, D.

AU - Hoffmann, G. W.

AU - Huang, W.

AU - Humanic, T.

AU - Ilyashenko, I.

AU - Kotov, I. V.

AU - Kuczcwski, P.

AU - Leouhasdt, W.

AU - Li, Z.

AU - Lynn, D.

AU - Pandey, S. U.

AU - Schambach, J.

AU - Soja, R.

AU - Sugarbaker, E.

AU - Zhao, L. J.

AU - Willson, R. M.

PY - 2000

Y1 - 2000

N2 - Large (6,3 × 6. 3cm2) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collidcr. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 10n - 1012/cm2, 1 MeV equivalent neutrons and 101° - 1012/on2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics.

AB - Large (6,3 × 6. 3cm2) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collidcr. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 10n - 1012/cm2, 1 MeV equivalent neutrons and 101° - 1012/on2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics.

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SP - 903

EP - 907

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

ER -

Radiation damage studies with star silicon drift detectors

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